PHE13003A,412 WeEn Semiconductor

PHE13003A NPN power transistor 3 October 2016 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) plastic package. 2. Features and benefits Fast switching High voltage capability Very low switching and conduction losses 3. Applications Compact fluorescent lamps (CFL) Electronic lighting ballasts Inverters Off-line self-oscillating power supplies 4. Pinning information Table 1. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C 2 C collector B 3 E emitter E 3 2 1 sym123 TO-92 (SOT54) 5. Ordering information Table 2. Ordering information Type number Package Name Description Version PHE13003A TO-92 plastic single-ended leaded (through hole) package 3 leads SOT54WeEn Semiconductors PHE13003A NPN power transistor 6. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-emitter peak V = 0 V - 700 V CESM BE voltage V collector-base voltage I = 0 A - 700 V CBO E V collector-emitter voltage I = 0 A - 400 V CEO B V emitter-base voltage I = 0 A I(Emitter) = 10 mA - 9 V EBO C I collector current DC Fig. 1 - 1 A C I peak collector current - 2 A CM I base current DC - 0.5 A B I peak base current - 1 A BM P total power dissipation T 25 C Fig. 2 - 2.1 W tot lead T storage temperature -65 150 C stg T junction temperature - 150 C j 003aad545 2 10 I C (A) 10 I C(max) 1 - 1 10 (1) - 2 10 DC - 3 10 2 3 1 10 10 10 V (V) CL(CE) Fig. 1. Forward bias safe operating area PHE13003A All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet 3 October 2016 2 / 10