W29N01HVBINF Winbond

W29N01HVBINF electronic component of Winbond
W29N01HVBINF Winbond
W29N01HVBINF NAND Flash
W29N01HVBINF  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of W29N01HVBINF NAND Flash across the USA, India, Europe, Australia, and various other global locations. W29N01HVBINF NAND Flash are a product manufactured by Winbond. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

Part No. W29N01HVBINF
Manufacturer: Winbond
Category: NAND Flash
Description: NAND Flash 1G-bit NAND flash, 3V, 4-bit ECC, 3V, x8
Datasheet: W29N01HVBINF Datasheet (PDF)
Price (USD)
1: USD 3.8981 ea
Line Total: USD 3.9 
Availability : 0
  
QtyUnit Price
1$ 3.8981
10$ 3.4172
25$ 3.1647
50$ 3.0954
100$ 3.0261
210$ 3.0261
420$ 3.0261
1050$ 2.9799

Availability 0
Ship by Thu. 28 Aug to Wed. 03 Sep
MOQ : 210
Multiples : 210
QtyUnit Price
210$ 4.1488
630$ 4.1081
840$ 4.0674
1050$ 4.0268
1680$ 3.9861
2100$ 3.9467
2520$ 3.906
5040$ 3.8679
5880$ 3.8286
21000$ 3.7905


Availability 0
Ship by Tue. 26 Aug to Thu. 28 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.8981
10$ 3.4172
25$ 3.1647
50$ 3.0954
100$ 3.0261
210$ 3.0261
420$ 3.0261
1050$ 2.9799

   
Manufacturer
Product Category
Mounting Style
Package / Case
Series
Memory Size
Interface Type
Organisation
Timing Type
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
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Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the W29N01HVBINF from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the W29N01HVBINF and other electronic components in the NAND Flash category and beyond.

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W29N01HVXINF W29N01HVXINF 1G-BIT 3.3V NAND FLASH MEMORY th Release Date: January 11 , 2018 1 Revision D W29N01HVXINF Table of Contents 1. GENERAL DESCRIPTION ............................................................................................................... 6 2. FEATURES ....................................................................................................................................... 6 3. PACKAGE TYPES AND PIN CONFIGURATIONS .......................................................................... 7 3.1 Pin assignment 48-pin TSOP1(x8) ....................................................................................... 7 3.2 Pin assignment 48 ball VFBGA (x8) ..................................................................................... 8 3.3 Pin assignment 63 ball VFBGA ............................................................................................ 9 3.4 Pin Descriptions .................................................................................................................. 10 4. PIN DESCRITPIONS ...................................................................................................................... 11 4.1 Chip Enable ( CE) .............................................................................................................. 11 4.2 Write Enable ( WE) ............................................................................................................ 11 4.3 Read Enable ( RE) ............................................................................................................ 11 4.4 Address Latch Enable (ALE) .............................................................................................. 11 4.5 Command Latch Enable (CLE) .......................................................................................... 11 4.6 Write Protect ( WP) ............................................................................................................ 11 4.7 Ready/Busy (RY/ BY) ........................................................................................................ 11 4.8 Input and Output (I/Ox) ....................................................................................................... 11 5. BLOCK DIAGRAM .......................................................................................................................... 12 6. MEMORY ARRAY ORGANIZATION .............................................................................................. 13 6.1 Array Organization (x8) ...................................................................................................... 13 7. MODE SELECTION TABLE ........................................................................................................... 14 8. COMMAND TABLE......................................................................................................................... 15 9. DEVICE OPERATIONS .................................................................................................................. 16 9.1 READ operation .................................................................................................................. 16 9.1.1 PAGE READ (00h-30h)......................................................................................................... 16 9.1.2 RANDOM DATA OUTPUT (05h-E0h) ................................................................................... 17 9.1.3 READ ID (90h) ...................................................................................................................... 17 9.1.4 READ PARAMETER PAGE (ECh) ....................................................................................... 18 9.1.5 READ STATUS (70h)............................................................................................................ 21 9.2 PROGRAM operation ......................................................................................................... 22 9.2.1 PAGE PROGRAM (80h-10h) ................................................................................................ 22 9.2.2 SERIAL DATA INPUT (80h) .................................................................................................. 22 9.2.3 RANDOM DATA INPUT (85h) .............................................................................................. 23 9.3 COPY BACK operation....................................................................................................... 24 9.3.1 READ for COPY BACK (00h-35h) ........................................................................................ 24 9.3.2 PROGRAM for COPY BACK (85h-10h) ................................................................................ 24 9.4 BLOCK ERASE operation .................................................................................................. 26 9.4.1 BLOCK ERASE (60h-D0h) .................................................................................................... 26 9.5 RESET operation ................................................................................................................ 27 9.5.1 RESET (FFh) ........................................................................................................................ 27 9.6 WRITE PROTECT .............................................................................................................. 28 10. ELECTRICAL CHARACTERISTICS............................................................................................... 30 10.1 Absolute Maximum Ratings ................................................................................................ 30 10.2 Operating Ranges .............................................................................................................. 30 th Release Date: January 11 , 2018 2 Revision D

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA
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