Product Information

W9751G6KB25I TR

W9751G6KB25I TR electronic component of Winbond

Datasheet
DRAM 512Mb DDR2-800, x16 Ind Temp T&R

Manufacturer: Winbond
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2466: USD 3.0272 ea
Line Total: USD 7465.08

0 - Global Stock
MOQ: 2466  Multiples: 2466
Pack Size: 2466
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 2500
Multiples : 2500
2500 : USD 2.7724
5000 : USD 2.6354
10000 : USD 2.6082
15000 : USD 2.5821
20000 : USD 2.5572
25000 : USD 2.5311
30000 : USD 2.5061
40000 : USD 2.4812
50000 : USD 2.4562

0 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 2466
Multiples : 2466
2466 : USD 3.1264
5000 : USD 2.8652
10000 : USD 2.8371
15000 : USD 2.7803

     
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W9751G6KB 8M 4 BANKS 16 BIT DDR2 SDRAM Table of Contents- 1. GENERAL DESCRIPTION ................................................................................................................... 4 2. FEATURES ........................................................................................................................................... 4 3. ORDER INFORMATION ....................................................................................................................... 5 4. KEY PARAMETERS ............................................................................................................................. 5 5. BALL CONFIGURATION ...................................................................................................................... 6 6. BALL DESCRIPTION ............................................................................................................................ 7 7. BLOCK DIAGRAM ................................................................................................................................ 8 8. FUNCTIONAL DESCRIPTION .............................................................................................................. 9 8.1 Power-up and Initialization Sequence ................................................................................................... 9 8.2 Mode Register and Extended Mode Registers Operation ................................................................... 10 8.2.1 Mode Register Set Command (MRS)............................................................................... 10 8.2.2 Extend Mode Register Set Commands (EMRS) .............................................................. 11 8.2.3 Off-Chip Driver (OCD) Impedance Adjustment ................................................................ 15 8.2.4 On-Die Termination (ODT) ............................................................................................... 18 8.2.5 ODT related timings ......................................................................................................... 18 8.3 Command Function ............................................................................................................................. 20 8.3.1 Bank Activate Command .................................................................................................. 20 8.3.2 Read Command ............................................................................................................... 20 8.3.3 Write Command ............................................................................................................... 21 8.3.4 Burst Read with Auto-precharge Command ..................................................................... 21 8.3.5 Burst Write with Auto-precharge Command ..................................................................... 21 8.3.6 Precharge All Command .................................................................................................. 21 8.3.7 Self Refresh Entry Command .......................................................................................... 21 8.3.8 Self Refresh Exit Command ............................................................................................. 22 8.3.9 Refresh Command ........................................................................................................... 22 8.3.10 No-Operation Command .................................................................................................. 23 8.3.11 Device Deselect Command .............................................................................................. 23 8.4 Read and Write access modes ........................................................................................................... 23 8.4.1 Posted CAS ..................................................................................................................... 23 8.4.2 Burst mode operation ....................................................................................................... 24 8.4.3 Burst read mode operation ............................................................................................... 25 8.4.4 Burst write mode operation .............................................................................................. 25 8.4.5 Write data mask ............................................................................................................... 26 8.5 Burst Interrupt ..................................................................................................................................... 26 8.6 Precharge operation ............................................................................................................................ 27 8.6.1 Burst read operation followed by precharge ..................................................................... 27 8.6.2 Burst write operation followed by precharge .................................................................... 27 8.7 Auto-precharge operation ................................................................................................................... 27 8.7.1 Burst read with Auto-precharge ....................................................................................... 28 8.7.2 Burst write with Auto-precharge ....................................................................................... 28 8.8 Refresh Operation ............................................................................................................................... 29 8.9 Power Down Mode .............................................................................................................................. 29 8.9.1 Power Down Entry ........................................................................................................... 30 8.9.2 Power Down Exit .............................................................................................................. 30 Publication Release Date: Jan. 23, 2017 Revision: A09 - 1 - W9751G6KB 8.10 Input clock frequency change during precharge power down ............................................................. 30 9. OPERATION MODE ........................................................................................................................... 31 9.1 Command Truth Table ........................................................................................................................ 31 9.2 Clock Enable (CKE) Truth Table for Synchronous Transitions ........................................................... 32 9.3 Data Mask (DM) Truth Table ............................................................................................................... 32 9.4 Function Truth Table ........................................................................................................................... 33 9.5 Simplified Stated Diagram ................................................................................................................... 36 10. ELECTRICAL CHARACTERISTICS ................................................................................................... 37 10.1 Absolute Maximum Ratings ................................................................................................................ 37 10.2 Operating Temperature Condition ....................................................................................................... 37 10.3 Recommended DC Operating Conditions ........................................................................................... 37 10.4 ODT DC Electrical Characteristics ...................................................................................................... 38 10.5 Input DC Logic Level ........................................................................................................................... 38 10.6 Input AC Logic Level ........................................................................................................................... 38 10.7 Capacitance ........................................................................................................................................ 39 10.8 Leakage and Output Buffer Characteristics ........................................................................................ 39 10.9 DC Characteristics .............................................................................................................................. 40 10.10 IDD Measurement Test Parameters .......................................................................................... 42 10.11 AC Characteristics ..................................................................................................................... 43 10.11.1 AC Characteristics and Operating Condition for -18/18I/18J speed grade ....................... 43 10.11.2 AC Characteristics and Operating Condition for -25/25L/25I/25J/-3 speed grade ............ 45 10.12 AC Input Test Conditions ........................................................................................................... 66 10.13 Differential Input/Output AC Logic Levels .................................................................................. 66 10.14 AC Overshoot / Undershoot Specification ................................................................................. 67 10.14.1 AC Overshoot / Undershoot Specification for Address and Control Pins: ........................ 67 10.14.2 AC Overshoot / Undershoot Specification for Clock, Data, Strobe and Mask pins: .......... 67 11. TIMING WAVEFORMS ....................................................................................................................... 68 11.1 Command Input Timing ....................................................................................................................... 68 11.2 ODT Timing for Active/Standby Mode ................................................................................................. 69 11.3 ODT Timing for Power Down Mode .................................................................................................... 69 11.4 ODT Timing mode switch at entering power down mode .................................................................... 70 11.5 ODT Timing mode switch at exiting power down mode ...................................................................... 71 11.6 Data output (read) timing .................................................................................................................... 72 11.7 Burst read operation: RL=5 (AL=2, CL=3, BL=4) ................................................................................ 72 11.8 Data input (write) timing ...................................................................................................................... 73 11.9 Burst write operation: RL=5 (AL=2, CL=3, WL=4, BL=4) .................................................................... 73 11.10 Seamless burst read operation: RL = 5 ( AL = 2, and CL = 3, BL = 4) ...................................... 74 11.11 Seamless burst write operation: RL = 5 ( WL = 4, BL = 4) ......................................................... 74 11.12 Burst read interrupt timing: RL =3 (CL=3, AL=0, BL=8) ............................................................. 75 11.13 Burst write interrupt timing: RL=3 (CL=3, AL=0, WL=2, BL=8) .................................................. 75 11.14 Write operation with Data Mask: WL=3, AL=0, BL=4) ............................................................... 76 11.15 Burst read operation followed by precharge: RL=4 (AL=1, CL=3, BL=4, tRTP 2clks) ............ 77 11.16 Burst read operation followed by precharge: RL=4 (AL=1, CL=3, BL=8, tRTP 2clks) ............ 77 11.17 Burst read operation followed by precharge: RL=5 (AL=2, CL=3, BL=4, tRTP 2clks) ............ 78 11.18 Burst read operation followed by precharge: RL=6 (AL=2, CL=4, BL=4, tRTP 2clks) ............ 78 11.19 Burst read operation followed by precharge: RL=4 (AL=0, CL=4, BL=8, tRTP > 2clks) ............ 79 11.20 Burst write operation followed by precharge: WL = (RL-1) = 3 .................................................. 79 11.21 Burst write operation followed by precharge: WL = (RL-1) = 4 .................................................. 80 11.22 Burst read operation with Auto-precharge: RL=4 (AL=1, CL=3, BL=8, tRTP 2clks) ............... 80 11.23 Burst read operation with Auto-precharge: RL=4 (AL=1, CL=3, BL=4, tRTP > 2clks) ............... 81 Publication Release Date: Jan. 23, 2017 Revision: A09 - 2 -

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Winbond Elec
WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA

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