Product Information

W97AH2KBVX2I

W97AH2KBVX2I electronic component of Winbond

Datasheet
DRAM 1Gb LPDDR2, x32, 400MHz, -40 ~ 85C

Manufacturer: Winbond
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

W97AH2KBVX2I
Winbond

1 : USD 4.5217
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

W97AH2KBVX2I
Winbond

1 : USD 7.079
10 : USD 4.8535
25 : USD 4.7628
50 : USD 4.7288
100 : USD 4.3999
250 : USD 4.3999
500 : USD 4.2752
1000 : USD 4.2071
5000 : USD 4.0257
N/A

Obsolete
     
Manufacturer
Product Category
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
W9812G6KH-6 TR electronic component of Winbond W9812G6KH-6 TR

DRAM 128Mb SDR SDRAM x16, 166MHz T&R
Stock : 0

W9812G6KH-6 electronic component of Winbond W9812G6KH-6

DRAM Chip SDRAM 128Mbit 8Mx16 3.3V 54-Pin TSOP-II
Stock : 1859

W9812G6KH-6I electronic component of Winbond W9812G6KH-6I

DRAM Chip SDRAM 128Mbit 8Mx16 3.3V 54-Pin TSOP-II
Stock : 1620

W9816G6JH-6 electronic component of Winbond W9816G6JH-6

DRAM Chip SDRAM 16Mbit 1Mx16 3.3V 50-Pin TSOP-II
Stock : 630

W9812G6JB-6I electronic component of Winbond W9812G6JB-6I

DRAM 128M SDR SDRAM x16, 166MHz, Ind temp
Stock : 0

W9812G6JB-6 electronic component of Winbond W9812G6JB-6

DRAM 128M SDR SDRAM x16, 166MHz,
Stock : 194

W9812G6KH-5 electronic component of Winbond W9812G6KH-5

DRAM 128M SDR SDRAM x16, 200MHz
Stock : 430

W97AH6KBVX2E electronic component of Winbond W97AH6KBVX2E

DRAM 1Gb LPDDR2, x16, 400MHz, -25 ~ 85C
Stock : 0

W97AH6KBVX2I electronic component of Winbond W97AH6KBVX2I

DRAM 1Gb LPDDR2, x16, 400MHz, -40 ~ 85C
Stock : 171

W9812G6KH-5I electronic component of Winbond W9812G6KH-5I

DRAM 128M SDR SDRAM x16 200MHz Ind temp
Stock : 314

Image Description
VJ0805Y103KXBBC31X electronic component of Vishay VJ0805Y103KXBBC31X

CAPACITOR, MLCC, X7R, 0.01UF, 100V, 0805
Stock : 0

WP25S-470RJA15 electronic component of TT Electronics WP25S-470RJA15

RESISTOR, FLAMEPROOF, 470R, 2.5W, 5%
Stock : 0

WP25S-1R0JA15 electronic component of TT Electronics WP25S-1R0JA15

RESISTOR, FLAMEPROOF, 1R, 2.5W, 5%
Stock : 0

WP25S-100RJA15 electronic component of TT Electronics WP25S-100RJA15

RESISTOR, FLAMEPROOF, 100R, 2.5W, 5%
Stock : 0

W9816G6JH-6 electronic component of Winbond W9816G6JH-6

DRAM Chip SDRAM 16Mbit 1Mx16 3.3V 50-Pin TSOP-II
Stock : 630

W9864G6KH-6 electronic component of IP9 W9864G6KH-6

W9864G6KH-6
Stock : 0

W9864G6KH-6I electronic component of Winbond W9864G6KH-6I

DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54-Pin TSOP-II
Stock : 2

W988D2FBJX6E electronic component of Winbond W988D2FBJX6E

DRAM Chip Mobile LPSDR SDRAM 256Mbit 8Mx32 1.8V 90-Pin VFBGA
Stock : 0

W989D2DBJX6I electronic component of Winbond W989D2DBJX6I

DRAM 512Mb LPSDR, x32, 166MHz, Ind Temp, 46nm
Stock : 194

RPM2 electronic component of Carlo Gavazzi RPM2

Relay Sockets & Fixings RP DINRAIL ADAPTOR
Stock : 0

W97AH6KB / W97AH2KB LPDDR2-S4B 1Gb Table of Contents- 1. GENERAL DESCRIPTION ............................................................................................................................................ 6 2. FEATURES .................................................................................................................................................................... 6 3. ORDER INFORMATION ................................................................................................................................................ 7 4. PIN CONFIGURATION .................................................................................................................................................. 8 4.1 134 Ball VFBGA ............................................................................................................................................................. 8 4.2 168 Ball WFBGA ............................................................................................................................................................ 9 5. PIN DESCRIPTION ..................................................................................................................................................... 10 5.1 Basic Functionality ....................................................................................................................................................... 10 5.2 Addressing Table ......................................................................................................................................................... 11 6. BLOCK DIAGRAM ....................................................................................................................................................... 12 7. FUNCTIONAL DESCRIPTION ..................................................................................................................................... 13 7.1 Simplified LPDDR2 State Diagram .............................................................................................................................. 13 7.1.1 Simplified LPDDR2 Bus Interface State Diagram ......................................................................................................... 14 7.2 Power-up, Initialization, and Power-Off ........................................................................................................................ 15 7.2.1 Power Ramp and Device Initialization .......................................................................................................................... 15 7.2.2 Timing Parameters for Initialization .............................................................................................................................. 17 7.2.3 Power Ramp and Initialization Sequence .................................................................................................................... 17 7.2.4 Initialization after Reset (without Power ramp) ............................................................................................................. 18 7.2.5 Power-off Sequence .................................................................................................................................................... 18 7.2.6 Timing Parameters Power-Off ..................................................................................................................................... 18 7.2.7 Uncontrolled Power-Off Sequence .............................................................................................................................. 18 7.3 Mode Register Definition .............................................................................................................................................. 19 7.3.1 Mode Register Assignment and Definition ................................................................................................................... 19 7.3.1.1 Mode Register Assignment ............................................................................................................................... 19 7.3.2 MR0 Device Information (MA 7:0 = 00H) ................................................................................................................... 20 7.3.3 MR1 Device Feature 1 (MA 7:0 = 01H) ...................................................................................................................... 20 7.3.3.1 Burst Sequence by Burst Length (BL), Burst Type (BT), and Warp Control (WC) .............................................. 21 7.3.3.2 Non Wrap Restrictions ...................................................................................................................................... 21 7.3.4 MR2 Device Feature 2 (MA 7:0 = 02H) ...................................................................................................................... 22 7.3.5 MR3 I/O Configuration 1 (MA 7:0 = 03H) ................................................................................................................... 22 7.3.6 MR4 Device Temperature (MA 7:0 = 04H) ................................................................................................................. 22 7.3.7 MR5 Basic Configuration 1 (MA 7:0 = 05H) ............................................................................................................... 23 7.3.8 MR6 Basic Configuration 2 (MA 7:0 = 06H) ............................................................................................................... 23 7.3.9 MR7 Basic Configuration 3 (MA 7:0 = 07H) ............................................................................................................... 23 7.3.10 MR8 Basic Configuration 4 (MA 7:0 = 08H) ............................................................................................................... 23 7.3.11 MR9 Test Mode (MA 7:0 = 09H) ................................................................................................................................ 23 7.3.12 MR10 Calibration (MA 7:0 = 0AH) ............................................................................................................................. 24 7.3.13 MR16 PASR Bank Mask (MA 7:0 = 10H) .................................................................................................................. 24 7.3.14 MR17 PASR Segment Mask (MA 7:0 = 11H) ............................................................................................................ 25 7.3.15 MR32 DQ Calibration Pattern A (MA 7:0 = 20H) ........................................................................................................ 25 7.3.16 MR40 DQ Calibration Pattern B (MA 7:0 = 28H) ........................................................................................................ 25 7.3.17 MR63 Reset (MA 7:0 = 3FH): MRW only ................................................................................................................... 25 7.4 Command Definitions and Timing Diagrams ................................................................................................................ 26 7.4.1 Activate Command ...................................................................................................................................................... 26 7.4.1.1 Activate Command Cycle: tRCD = 3, tRP = 3, tRRD = 2 ................................................................................... 26 7.4.1.2 tFAW Timing ..................................................................................................................................................... 27 7.4.1.3 Command Input Setup and Hold Timing............................................................................................................ 27 7.4.1.4 CKE Input Setup and Hold Timing .................................................................................................................... 28 7.4.2 Read and Write Access Modes.................................................................................................................................... 28 7.4.3 Burst Read Command ................................................................................................................................................. 28 7.4.3.1 Data Output (Read) Timing (tDQSCKmax) ........................................................................................................ 29 7.4.3.2 Data Output (Read) Timing (tDQSCKmin) ......................................................................................................... 30 Publication Release Date: Apr. 10, 2018 Revision: A01-002 - 1 - W97AH6KB / W97AH2KB 7.4.3.3 Burst Read: RL = 5, BL = 4, tDQSCK > tCK ...................................................................................................... 30 7.4.3.4 Burst Read: RL = 3, BL = 8, tDQSCK < tCK ...................................................................................................... 31 7.4.3.5 LPDDR2: tDQSCKDL Timing ............................................................................................................................ 31 7.4.3.6 LPDDR2: tDQSCKDM Timing ........................................................................................................................... 32 7.4.3.7 LPDDR2: tDQSCKDS Timing............................................................................................................................ 32 7.4.3.8 Burst Read Followed by Burst Write: RL = 3, WL = 1, BL = 4 ............................................................................ 33 7.4.3.9 Seamless Burst Read: RL = 3, BL= 4, tCCD = 2 ............................................................................................... 33 7.4.4 Reads Interrupted by a Read ....................................................................................................................................... 34 7.4.4.1 Read Burst Interrupt Example: RL = 3, BL= 8, tCCD = 2 ................................................................................... 34 7.4.5 Burst Write Operation .................................................................................................................................................. 34 7.4.5.1 Data Input (Write) Timing .................................................................................................................................. 35 7.4.5.2 Burst Write: WL = 1, BL= 4 ............................................................................................................................... 35 7.4.5.3 Burst Write Followed by Burst Read: RL = 3, WL= 1, BL= 4 .............................................................................. 36 7.4.5.4 Seamless Burst Write: WL= 1, BL = 4, tCCD = 2............................................................................................... 36 7.4.6 Writes Interrupted by a Write ....................................................................................................................................... 37 7.4.6.1 Write Burst Interrupt Timing: WL = 1, BL = 8, tCCD = 2 .................................................................................... 37 7.4.7 Burst Terminate ........................................................................................................................................................... 37 7.4.7.1 Burst Write Truncated by BST: WL = 1, BL = 16 ............................................................................................... 38 7.4.7.2 Burst Read Truncated by BST: RL = 3, BL = 16 ................................................................................................ 38 7.4.8 Write Data Mask .......................................................................................................................................................... 39 7.4.8.1 Write Data Mask Timing .................................................................................................................................... 39 7.4.9 Precharge Operation ................................................................................................................................................... 40 7.4.9.1 Bank Selection for Precharge by Address Bits .................................................................................................. 40 7.4.10 Burst Read Operation Followed by Precharge ............................................................................................................. 40 7.4.10.1 Burst Read Followed by Precharge: RL = 3, BL = 8, RU(tRTP(min)/tCK) = 2 .................................................... 41 7.4.10.2 Burst Read Followed by Precharge: RL = 3, BL = 4, RU(tRTP(min)/tCK) = 3 .................................................... 41 7.4.11 Burst Write Followed by Precharge ............................................................................................................................. 42 7.4.11.1 Burst Write Followed by Precharge: WL = 1, BL = 4 .......................................................................................... 42 7.4.12 Auto Precharge Operation ........................................................................................................................................... 43 7.4.13 Burst Read with Auto-Precharge ................................................................................................................................. 43 7.4.13.1 Burst Read with Auto-Precharge: RL = 3, BL = 4, RU(tRTP(min)/tCK) = 2 ........................................................ 43 7.4.14 Burst Write with Auto-Precharge .................................................................................................................................. 44 7.4.14.1 Burst Write with Auto-Precharge: WL = 1, BL = 4 .............................................................................................. 44 7.4.14.2 Precharge & Auto Precharge Clarification ......................................................................................................... 45 7.4.15 Refresh Command ...................................................................................................................................................... 46 7.4.15.1 Command Scheduling Separations Related to Refresh ..................................................................................... 47 7.4.16 LPDDR2 SDRAM Refresh Requirements .................................................................................................................... 47 7.4.16.1 Definition of tSRF .............................................................................................................................................. 48 7.4.16.2 Regular, Distributed Refresh Pattern ................................................................................................................. 50 7.4.16.3 Allowable Transition from Repetitive Burst Refresh ........................................................................................... 50 7.4.16.4 NOT-Allowable Transition from Repetitive Burst Refresh .................................................................................. 51 7.4.16.5 Recommended Self-Refresh Entry and Exit ...................................................................................................... 51 7.4.16.6 All Bank Refresh Operation ............................................................................................................................... 52 7.4.16.7 Per Bank Refresh Operation ............................................................................................................................. 52 7.4.17 Self Refresh Operation ................................................................................................................................................ 53 7.4.18 Partial Array Self-Refresh: Bank Masking .................................................................................................................... 54 7.4.19 Partial Array Self-Refresh: Segment Masking .............................................................................................................. 54 7.4.20 Mode Register Read Command .................................................................................................................................. 55 7.4.20.1 Mode Register Read Timing Example: RL = 3, tMRR = 2 .................................................................................. 56 7.4.20.2 Read to MRR Timing Example: RL = 3, tMRR = 2 ............................................................................................ 57 7.4.20.3 Burst Write Followed by MRR: RL = 3, WL = 1, BL = 4 ..................................................................................... 57 7.4.21 Temperature Sensor.................................................................................................................................................... 58 7.4.21.1 Temperature Sensor Timing ............................................................................................................................. 59 7.4.21.2 DQ Calibration .................................................................................................................................................. 59 7.4.21.3 MR32 and MR40 DQ Calibration Timing Example: RL = 3, tMRR = 2 ............................................................... 60 7.4.22 Mode Register Write Command................................................................................................................................... 61 Publication Release Date: Apr. 10, 2018 Revision: A01-002 - 2 -

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Winbond Elec
WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted