X-On Electronics has gained recognition as a prominent supplier of W97AH2KBVX1E DRAM across the USA, India, Europe, Australia, and various other global locations. W97AH2KBVX1E DRAM are a product manufactured by Winbond. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

W97AH2KBVX1E Winbond

W97AH2KBVX1E electronic component of Winbond
W97AH2KBVX1E Winbond
W97AH2KBVX1E DRAM
W97AH2KBVX1E  Semiconductors

Images are for reference only
See Product Specifications
Part No. W97AH2KBVX1E
Manufacturer: Winbond
Category: DRAM
Description: DRAM 1Gb LPDDR2, x32, 533MHz, -25 ~ 85C
Datasheet: W97AH2KBVX1E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 6.3464
10 : USD 4.347
25 : USD 4.2674
50 : USD 4.2376
100 : USD 3.9391
250 : USD 3.9391
500 : USD 3.8297
1000 : USD 3.77
5000 : USD 3.6109
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Type
Mounting Style
Package / Case
Data Bus Width
Memory Size
Maximum Clock Frequency
Supply Voltage - Max
Supply Voltage - Min
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Series
Organization
Brand
Moisture Sensitive
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the W97AH2KBVX1E from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the W97AH2KBVX1E and other electronic components in the DRAM category and beyond.

Image Part-Description
Stock Image W9812G6KH-6
DRAM Chip SDRAM 128Mbit 8Mx16 3.3V 54-Pin TSOP-II
Stock : 398
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image W97AH2KBVX2I
DRAM 1Gb LPDDR2, x32, 400MHz, -40 ~ 85C
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image W9812G6JB-6I
DRAM 128M SDR SDRAM x16, 166MHz, Ind temp
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image W9812G6JB-6
DRAM 128M SDR SDRAM x16, 166MHz,
Stock : 194
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image W97AH2KBVX2E
DRAM 1Gb LPDDR2, x32, 400MHz, -25 ~ 85C
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image W9812G6KH-5
DRAM 128M SDR SDRAM x16, 200MHz
Stock : 430
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image W97AH2KBVX1I
DRAM 1Gb LPDDR2, x32, 533MHz, -40 ~ 85C
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image W97AH6KBVX2E
DRAM 1Gb LPDDR2, x16, 400MHz, -25 ~ 85C
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image W97AH6KBVX2I
DRAM 1Gb LPDDR2, x16, 400MHz, -40 ~ 85C
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image W9812G6KH-5I
DRAM 128M SDR SDRAM x16 200MHz Ind temp
Stock : 648
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Image Part-Description
Stock Image W97AH2KBVX1I
DRAM 1Gb LPDDR2, x32, 533MHz, -40 ~ 85C
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image W97AH6KBVX2E
DRAM 1Gb LPDDR2, x16, 400MHz, -25 ~ 85C
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image W97AH6KBVX2I
DRAM 1Gb LPDDR2, x16, 400MHz, -40 ~ 85C
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image W9812G6KH-5I
DRAM 128M SDR SDRAM x16 200MHz Ind temp
Stock : 648
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image W9816G6JH-7
DRAM 16M SDR SDRAM 133MHz
Stock : 685
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image W9864G6KH-5
DRAM 64M SDR SDRAM x16 200MHz 46nm
Stock : 432
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image IS42SM16320E-75BLI
DRAM 512Mb 32Mx16 166MHz Mobile SDRAM
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image IS43QR16256B-083RBLI
DRAM 4G, 1.2V, DDR4, 256Mx16, 2400MT/s @ 16-16-16, 96 ball BGA (7.5mm x13.5mm) RoHS, IT
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image IS43QR16256B-083RBL
DRAM 4G, 1.2V, DDR4, 256Mx16, 2400MT/s @ 16-16-16, 96 ball BGA (7.5mm x13.5mm) RoHS
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image IS43TR16128DL-107MBL
SDRAM - DDR3L Memory IC 2Gb (128M x 16) Parallel 933 MHz 20 ns 96-TWBGA (9x13)
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

W97AH6KB / W97AH2KB LPDDR2-S4B 1Gb Table of Contents- 1. GENERAL DESCRIPTION ............................................................................................................................................ 6 2. FEATURES .................................................................................................................................................................... 6 3. ORDER INFORMATION ................................................................................................................................................ 7 4. PIN CONFIGURATION .................................................................................................................................................. 8 4.1 134 Ball VFBGA ............................................................................................................................................................. 8 4.2 168 Ball WFBGA ............................................................................................................................................................ 9 5. PIN DESCRIPTION ..................................................................................................................................................... 10 5.1 Basic Functionality ....................................................................................................................................................... 10 5.2 Addressing Table ......................................................................................................................................................... 11 6. BLOCK DIAGRAM ....................................................................................................................................................... 12 7. FUNCTIONAL DESCRIPTION ..................................................................................................................................... 13 7.1 Simplified LPDDR2 State Diagram .............................................................................................................................. 13 7.1.1 Simplified LPDDR2 Bus Interface State Diagram ......................................................................................................... 14 7.2 Power-up, Initialization, and Power-Off ........................................................................................................................ 15 7.2.1 Power Ramp and Device Initialization .......................................................................................................................... 15 7.2.2 Timing Parameters for Initialization .............................................................................................................................. 17 7.2.3 Power Ramp and Initialization Sequence .................................................................................................................... 17 7.2.4 Initialization after Reset (without Power ramp) ............................................................................................................. 18 7.2.5 Power-off Sequence .................................................................................................................................................... 18 7.2.6 Timing Parameters Power-Off ..................................................................................................................................... 18 7.2.7 Uncontrolled Power-Off Sequence .............................................................................................................................. 18 7.3 Mode Register Definition .............................................................................................................................................. 19 7.3.1 Mode Register Assignment and Definition ................................................................................................................... 19 7.3.1.1 Mode Register Assignment ............................................................................................................................... 19 7.3.2 MR0 Device Information (MA 7:0 = 00H) ................................................................................................................... 20 7.3.3 MR1 Device Feature 1 (MA 7:0 = 01H) ...................................................................................................................... 20 7.3.3.1 Burst Sequence by Burst Length (BL), Burst Type (BT), and Warp Control (WC) .............................................. 21 7.3.3.2 Non Wrap Restrictions ...................................................................................................................................... 21 7.3.4 MR2 Device Feature 2 (MA 7:0 = 02H) ...................................................................................................................... 22 7.3.5 MR3 I/O Configuration 1 (MA 7:0 = 03H) ................................................................................................................... 22 7.3.6 MR4 Device Temperature (MA 7:0 = 04H) ................................................................................................................. 22 7.3.7 MR5 Basic Configuration 1 (MA 7:0 = 05H) ............................................................................................................... 23 7.3.8 MR6 Basic Configuration 2 (MA 7:0 = 06H) ............................................................................................................... 23 7.3.9 MR7 Basic Configuration 3 (MA 7:0 = 07H) ............................................................................................................... 23 7.3.10 MR8 Basic Configuration 4 (MA 7:0 = 08H) ............................................................................................................... 23 7.3.11 MR9 Test Mode (MA 7:0 = 09H) ................................................................................................................................ 23 7.3.12 MR10 Calibration (MA 7:0 = 0AH) ............................................................................................................................. 24 7.3.13 MR16 PASR Bank Mask (MA 7:0 = 10H) .................................................................................................................. 24 7.3.14 MR17 PASR Segment Mask (MA 7:0 = 11H) ............................................................................................................ 25 7.3.15 MR32 DQ Calibration Pattern A (MA 7:0 = 20H) ........................................................................................................ 25 7.3.16 MR40 DQ Calibration Pattern B (MA 7:0 = 28H) ........................................................................................................ 25 7.3.17 MR63 Reset (MA 7:0 = 3FH): MRW only ................................................................................................................... 25 7.4 Command Definitions and Timing Diagrams ................................................................................................................ 26 7.4.1 Activate Command ...................................................................................................................................................... 26 7.4.1.1 Activate Command Cycle: tRCD = 3, tRP = 3, tRRD = 2 ................................................................................... 26 7.4.1.2 tFAW Timing ..................................................................................................................................................... 27 7.4.1.3 Command Input Setup and Hold Timing............................................................................................................ 27 7.4.1.4 CKE Input Setup and Hold Timing .................................................................................................................... 28 7.4.2 Read and Write Access Modes.................................................................................................................................... 28 7.4.3 Burst Read Command ................................................................................................................................................. 28 7.4.3.1 Data Output (Read) Timing (tDQSCKmax) ........................................................................................................ 29 7.4.3.2 Data Output (Read) Timing (tDQSCKmin) ......................................................................................................... 30 Publication Release Date: Apr. 10, 2018 Revision: A01-002 - 1 - W97AH6KB / W97AH2KB 7.4.3.3 Burst Read: RL = 5, BL = 4, tDQSCK > tCK ...................................................................................................... 30 7.4.3.4 Burst Read: RL = 3, BL = 8, tDQSCK < tCK ...................................................................................................... 31 7.4.3.5 LPDDR2: tDQSCKDL Timing ............................................................................................................................ 31 7.4.3.6 LPDDR2: tDQSCKDM Timing ........................................................................................................................... 32 7.4.3.7 LPDDR2: tDQSCKDS Timing............................................................................................................................ 32 7.4.3.8 Burst Read Followed by Burst Write: RL = 3, WL = 1, BL = 4 ............................................................................ 33 7.4.3.9 Seamless Burst Read: RL = 3, BL= 4, tCCD = 2 ............................................................................................... 33 7.4.4 Reads Interrupted by a Read ....................................................................................................................................... 34 7.4.4.1 Read Burst Interrupt Example: RL = 3, BL= 8, tCCD = 2 ................................................................................... 34 7.4.5 Burst Write Operation .................................................................................................................................................. 34 7.4.5.1 Data Input (Write) Timing .................................................................................................................................. 35 7.4.5.2 Burst Write: WL = 1, BL= 4 ............................................................................................................................... 35 7.4.5.3 Burst Write Followed by Burst Read: RL = 3, WL= 1, BL= 4 .............................................................................. 36 7.4.5.4 Seamless Burst Write: WL= 1, BL = 4, tCCD = 2............................................................................................... 36 7.4.6 Writes Interrupted by a Write ....................................................................................................................................... 37 7.4.6.1 Write Burst Interrupt Timing: WL = 1, BL = 8, tCCD = 2 .................................................................................... 37 7.4.7 Burst Terminate ........................................................................................................................................................... 37 7.4.7.1 Burst Write Truncated by BST: WL = 1, BL = 16 ............................................................................................... 38 7.4.7.2 Burst Read Truncated by BST: RL = 3, BL = 16 ................................................................................................ 38 7.4.8 Write Data Mask .......................................................................................................................................................... 39 7.4.8.1 Write Data Mask Timing .................................................................................................................................... 39 7.4.9 Precharge Operation ................................................................................................................................................... 40 7.4.9.1 Bank Selection for Precharge by Address Bits .................................................................................................. 40 7.4.10 Burst Read Operation Followed by Precharge ............................................................................................................. 40 7.4.10.1 Burst Read Followed by Precharge: RL = 3, BL = 8, RU(tRTP(min)/tCK) = 2 .................................................... 41 7.4.10.2 Burst Read Followed by Precharge: RL = 3, BL = 4, RU(tRTP(min)/tCK) = 3 .................................................... 41 7.4.11 Burst Write Followed by Precharge ............................................................................................................................. 42 7.4.11.1 Burst Write Followed by Precharge: WL = 1, BL = 4 .......................................................................................... 42 7.4.12 Auto Precharge Operation ........................................................................................................................................... 43 7.4.13 Burst Read with Auto-Precharge ................................................................................................................................. 43 7.4.13.1 Burst Read with Auto-Precharge: RL = 3, BL = 4, RU(tRTP(min)/tCK) = 2 ........................................................ 43 7.4.14 Burst Write with Auto-Precharge .................................................................................................................................. 44 7.4.14.1 Burst Write with Auto-Precharge: WL = 1, BL = 4 .............................................................................................. 44 7.4.14.2 Precharge & Auto Precharge Clarification ......................................................................................................... 45 7.4.15 Refresh Command ...................................................................................................................................................... 46 7.4.15.1 Command Scheduling Separations Related to Refresh ..................................................................................... 47 7.4.16 LPDDR2 SDRAM Refresh Requirements .................................................................................................................... 47 7.4.16.1 Definition of tSRF .............................................................................................................................................. 48 7.4.16.2 Regular, Distributed Refresh Pattern ................................................................................................................. 50 7.4.16.3 Allowable Transition from Repetitive Burst Refresh ........................................................................................... 50 7.4.16.4 NOT-Allowable Transition from Repetitive Burst Refresh .................................................................................. 51 7.4.16.5 Recommended Self-Refresh Entry and Exit ...................................................................................................... 51 7.4.16.6 All Bank Refresh Operation ............................................................................................................................... 52 7.4.16.7 Per Bank Refresh Operation ............................................................................................................................. 52 7.4.17 Self Refresh Operation ................................................................................................................................................ 53 7.4.18 Partial Array Self-Refresh: Bank Masking .................................................................................................................... 54 7.4.19 Partial Array Self-Refresh: Segment Masking .............................................................................................................. 54 7.4.20 Mode Register Read Command .................................................................................................................................. 55 7.4.20.1 Mode Register Read Timing Example: RL = 3, tMRR = 2 .................................................................................. 56 7.4.20.2 Read to MRR Timing Example: RL = 3, tMRR = 2 ............................................................................................ 57 7.4.20.3 Burst Write Followed by MRR: RL = 3, WL = 1, BL = 4 ..................................................................................... 57 7.4.21 Temperature Sensor.................................................................................................................................................... 58 7.4.21.1 Temperature Sensor Timing ............................................................................................................................. 59 7.4.21.2 DQ Calibration .................................................................................................................................................. 59 7.4.21.3 MR32 and MR40 DQ Calibration Timing Example: RL = 3, tMRR = 2 ............................................................... 60 7.4.22 Mode Register Write Command................................................................................................................................... 61 Publication Release Date: Apr. 10, 2018 Revision: A01-002 - 2 -

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA
4570PA01H01800 Absorbers & Shielding by Laird Connectivity image

Jan 24, 2025
Discover the 4570PA01H01800 EMI Gaskets & Grounding Pads by Laird Connectivity, engineered for superior EMI shielding and grounding in electronic assemblies. Designed with nickel-copper taffeta fabric and polyurethane foam, these components are flame-resistant (UL94 V0) and RoHS compliant. Ideal fo
GP2S60B Sensors by Sharp: High-Precision Optical Switches for Global Application image

Apr 7, 2025
The GP2S60B Optical Switch by Sharp is a sub-miniature reflective photo-interrupter designed for automatic mounting. With a compact 3.2×1.7×1.1mm size, it ensures precise sensing for audio, VCRs, printers, and more.
6030B Heat Sinks by Aavid : A Comprehensive Overview image

Nov 22, 2024
The 6030B Heat Sink by Aavid is a premium thermal management solution designed for TO-220 components. With a thermal resistance of 12°C/W , it effectively dissipates heat in power supplies, audio amplifiers, automotive electronics, and embedded systems. Made from durable aluminum alloy with a bl
Best RH02516R00FC02 Wirewound Resistors Retailer of India image

Sep 4, 2024
Discover why Xon Electronic is the top retailer of the RH02516R00FC02 Wirewound Resistor - Chassis Mount, a high-performance component by Vishay. Learn about its key features, including a 25-watt power rating, 16-ohm resistance, and 1% tolerance, and explore its applications in power supplies, moto

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON Electronics
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2025  X-ON Electronics Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing. All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted AS9120 Certified