C4D08120A V = 1200 V RRM Silicon Carbide Schottky Diode I (T =135C) = 12 A F C Z -Rec Rectifier Q = 37 nC c Features Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on V F TO-220-2 Benefits Replace Bipolar with Unipolar Rectifiers PIN 1 Essentially No Switching Losses CASE Higher Efficiency PIN 2 Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications Part Number Package Marking Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages C4D08120A TO-220-2 C4D08120 Free Wheeling Diodes in Inverter stages AC/DC converters Maximum Ratings (T =25C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 1200 V RRM V Surge Peak Reverse Voltage 1300 V RSM V DC Peak Reverse Voltage 1200 V R 24.5 T =25C C I Continuous Forward Current 12 A T =135C Fig. 3 F C 8 T =157C C 37.5 T =25C, t =10 ms, Half Sine Pulse C P I Repetitive Peak Forward Surge Current A FRM 25 T =110C, t =10 ms, Half Sine Pulse C P 64 T =25C, t =10 ms, Half Sine Pulse C P I Non-Repetitive Forward Surge Current A Fig. 8 FSM 49.5 T =110C, t =10 ms, Half Sine Pulse C P 600 T =25C, t =10 m s, Pulse C P I Non-Repetitive Peak Forward Current A Fig. 8 F,Max 480 T =110C, t =10 m s, Pulse C P 136.5 T =25C C P Power Dissipation W Fig. 4 tot 59 T =110C C dV/dt Diode dV/dt ruggedness 200 V/ns V =0-960V R 20.5 T =25C, t =10 ms 2 2 2 C P i dt i t value A s 12.25 T =110C, t =10 ms C P -55 to T Operating Junction Range C J +175 -55 to T Storage Temperature Range C stg +135 1 Nm M3 Screw TO-220 Mounting Torque 8.8 lbf-in 6-32 Screw 1 C4D08120A Rev. C, 10-2016Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 1.5 1.8 I = 8 A T =25C F J V Forward Voltage V Fig. 1 F 2.2 3 I = 8 A T =175C F J 35 250 V = 1200 V T =25C R J I Reverse Current A Fig. 2 R 100 350 V = 1200 V T =175C R J V = 800 V, I = 8 A R F Q Total Capacitive Charge 37 nC di /dt = 200 A/s Fig. 5 C T = 25C J 560 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 37 pF V = 400 V, T = 25C, f = 1 MHz Fig. 6 R J 27 V = 800 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 10.5 J V = 800 V Fig. 7 C R Note:This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note R Thermal Resistance from Junction to Case 1.1 C/W Fig. 9 JC Typical Performance 14 800 T =-55C J 700 T = 25C J 12 T = 75C J T =125C J T =175C J 600 10 500 8 400 6 300 T =-55C J T = 25C J T = 75C 4 J T =125C 200 J T =175C J 2 100 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 500 1000 1500 2000 V (V) V (V) F R Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C4D08120A Rev. C, 10-2016 I (A) F I (A) R