C4D10120H V = 1200 V RRM Silicon Carbide Schottky Diode I (T =135C) = 15 A F C Z -Rec Rectifier Q = 52 nC c Features Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on V F Increased Creepage/Clearance Distance TO-247-2 Benefits PIN 1 Replace Bipolar with Unipolar Rectifiers CASE Essentially No Switching Losses PIN 2 Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Part Number Package Marking Applications C4D10120H TO-247-2 C4D10120 Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters Maximum Ratings (T =25C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 1200 V RRM V Surge Peak Reverse Voltage 1300 V RSM V DC Peak Reverse Voltage 1200 V R 31.5 T =25C C I Continuous Forward Current 15 A T =135C Fig. 3 F C 10 T =155C C 46 T =25C, t =10 ms, Half Sine Pulse C P I Repetitive Peak Forward Surge Current A FRM 30 T =110C, t =10 ms, Half Sine Pulse C P 67 T =25C, t =10 ms, Half Sine Pulse C P I Non-Repetitive Forward Surge Current A Fig. 8 FSM 59 T =110C, t =10 ms, Half Sine Pulse C P 750 T =25C, t =10 m s, Pulse C P I Non-Repetitive Peak Forward Current A Fig. 8 F,Max 620 T =110C, t =10 m s, Pulse C P 153 T =25C C P Power Dissipation W Fig. 4 tot 66 T =110C C dV/dt Diode dV/dt ruggedness 200 V/ns V =0-960V R 22.5 T =25C, t =10 ms 2 2 2 C P i dt i t value A s 17.5 T =110C, t =10 ms C P -55 to T , T Operating Junction and Storage Temperature C J stg +175 1 Nm M3 Screw TO-247 Mounting Torque 8.8 lbf-in 6-32 Screw 1 C4D10120H Rev. -, 02-2018Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 1.5 1.8 I = 10 A T =25C F J V Forward Voltage V Fig. 1 F 2.2 3 I = 10 A T =175C F J 30 250 V = 1200 V T =25C R J I Reverse Current A Fig. 2 R 55 350 V = 1200 V T =175C R J V = 800 V, I = 10A R F Q Total Capacitive Charge 52 nC di /dt = 200 A/s Fig. 5 C T = 25C J 754 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 45 pF V = 400 V, T = 25C, f = 1 MHz Fig. 6 R J 38 V = 800 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 14.5 J V = 800 V Fig. 7 C R Note:This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note R Thermal Resistance from Junction to Case 0.98 C/W Fig. 9 JC Typical Performance 20 600.00 T =-55C 18 J T = 25C J T = 75C 500.00 J 16 T =125C J T =175C J 14 400.00 12 300.00 10 8 200.00 T =-55C J T = 25C 6 J T = 75C J T =125C J 4 T =175C J 100.00 2 0.00 0 0 0.5 1 1.5 2 2.5 3 3.5 0 500 1000 1500 2000 V Forward Voltage V Reverse Voltage V (V) V (V) F R F R Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C4D10120H Rev. -, 02-2018 I (A) I Forward Current F F I ReversI e C (A)urrent (A) R R