C4D08120E V = 1200 V RRM Silicon Carbide Schottky Diode I (T =135C) = 12 A F C Z -Rec Rectifier Q = 37 nC c Features Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on V F TO-252-2 Benefits Replace Bipolar with Unipolar Rectifiers PIN 1 Essentially No Switching Losses CASE Higher Efficiency PIN 2 Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications Part Number Package Marking Solar Inverters C4D08120E TO-252-2 C4D08120 Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters Maximum Ratings (T =25C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 1200 V RRM V Surge Peak Reverse Voltage 1300 V RSM V DC Blocking Voltage 1200 V DC 24.5 T =25C C I Continuous Forward Current 12 A T =135C Fig. 3 F C 8 T =157C C 37.5 T =25C, t =10 ms, Half Sine pulse C P I Repetitive Peak Forward Surge Current A FRM 25 T =110C, t =10 ms, Half Sine pulse C P 64 T =25C, t =10 ms, Half Sine pulse C P I Non-Repetitive Peak Forward Surge Current A Fig. 8 FSM 50 T =110C, t =10 ms, Half Sine pulse C P 600 T =25C, t =10 m s, Pulse C P I Non-Repetitive Peak Forward Current A Fig. 8 F,Max 480 T =110C, t =10 m s, Pulse C P 136.5 T =25C C P Power Dissipation W Fig. 4 tot 59 T =110C C dV/dt Diode dV/dt ruggedness 200 V/ns V =0-650V R 20.5 T =25C, t =10 ms 2 2 2 C P i dt i t value A s 12.5 T =110C, t =10 ms C P -55 to T , T Operating Junction and Storage Temperature C J stg +175 1 C4D08120E Rev. F, 01-2017Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 1.5 1.8 I = 8 A T =25C F J V Forward Voltage V Fig. 1 F 2.2 3 I = 8 A T =175C F J 35 250 V = 1200 V T =25C R J I Reverse Current A Fig. 2 R 100 350 V = 1200 V T =175C R J V = 800 V, I = 8 A R F Q Total Capacitive Charge 37 nC di /dt = 200 A/s Fig. 5 C T = 25C J 560 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 37 pF V = 400 V, T = 25C, f = 1 MHz Fig. 6 R J 27 V = 800 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 10.5 J V = 800 V Fig. 7 C R Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note R Thermal Resistance from Junction to Case 1.1 C/W Fig. 9 JC Typical Performance 15 500 14 450 T =-55C J 13 T = 25C J T = 75C J 12 400 T =125C J T =175C J 11 350 10 300 9 8 250 7 T =-55C J 200 6 T = 25C J T = 75C J 5 T =125C J 150 T =175C J 4 100 3 2 50 1 0 0 0 200 400 600 800 1000 1200 1400 1600 1800 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 V (V) R V (V) F Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C4D08120E Rev. F, 01-2017 I (A) F I (A) R