PN: CG2H80015D CG2H80015D 15 W, 8.0 GHz, GaN HEMT Die Crees CG2H80015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors. FEATURES APPLICATIONS 17 dB Typical Small Signal Gain at 4 GHz 2-Way Private Radio 12 dB Typical Small Signal Gain at 8 GHz Broadband Amplifiers 15 W Typical P Cellular Infrastructure SAT 28 V Operation Test Instrumentation High Breakdown Voltage Class A, AB, Linear amplifiers suitable for High Temperature Operation OFDM, W-CDMA, EDGE, CDMA waveforms Up to 8 GHz Operation High Efficiency Packaging Information Bare die are shipped in Gel-Pak containers. Non-adhesive tacky membrane immobilizes die during shipment. Subject to change without notice. 1 www.cree.com/rf Rev 0.0 May 2017Absolute Maximum Ratings (not simultaneous) at 25C Parameter Symbol Rating Units Conditions Drain-source Voltage V 120 VDC 25C DSS Gate-source Voltage V -10, +2 VDC 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 4.0 mA 25C GMAX 1 Maximum Drain Current I 1.5 A 25C DMAX 2 Thermal Resistance, Junction to Case (packaged) R 8.0 C/W JC Thermal Resistance, Junction to Case (die only) R 5.1 C/W 85C JC Mounting Temperature (30 seconds) T 320 C 30 seconds S 1 Note Current limit for long term, reliable operation 2 Note Eutectic die attach using 80/20 AuSn mounted to a 40 mil thick CuMoCu carrier. Electrical Characteristics (Frequency = 4 GHz unless otherwise stated T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics Gate Threshold Voltage V -3.8 -3.0 2.3 V V = 10 V, I = 3.6 mA GS(TH) DS D Gate Quiescent Voltage V -2.7 V V = 28 V, I = 100 mA GS(Q) DC DD DQ Drain Current I 2.9 3.5 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 120 V V = -8 V, I = 3.6 mA BD GS D On Resistance R 0.67 V = 0.1 V ON DS Gate Forward Voltage V 1.9 V I = 3.6 mA G-ON GS RF Characteristics Small Signal Gain G 17 dB V = 28 V, I = 100 mA SS DD DQ 1 Saturated Power Output P 15 W V = 28 V, I = 100 mA SAT DD DQ 2 Drain Efficiency 65 % V = 28 V, I = 100 mA, P = 15 W DD DQ SAT V = 28 V, I = 100 mA, DD DQ Intermodulation Distortion IM3 -30 dBc P = 15 W PEP OUT No damage at all phase angles, Output Mismatch Stress VSWR 10 : 1 Y V = 28 V, I = 100 mA, DD DQ P = 15 W CW OUT Dynamic Characteristics Input Capacitance C 3.7 pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 1.1 pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.2 pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 P is defined as I = 0.4 mA. SAT G 2 Drain Efficiency = P / P OUT DC Cree, Inc. Copyright 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are 4600 Silicon Drive registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 product and/or vendor endorsement, sponsorship or association. Fax: +1.919.869.2733 www.cree.com/rf 2 CG2H80015D Rev 0.0