PN: CMPA5585030F Package Type: 440213 CMPA5585030F 30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Crees CMPA5585030F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10 lead metal/ceramic flanged package for optimal electrical and thermal performance. Typical Performance Over 5.8-8.4 GHz (T = 25C) C Parameter 5.8 GHz 6.4 GHz 7.2 GHz 7.9 GHz 8.4 GHz Units 1,2 S21 25.9 23.8 26.5 24.5 26.7 dB ,2,5 Power Gain 22.3 19.0 20.9 21.6 21.2 dB 1,2,4,5 PAE 24.7 20.7 20.3 22.6 22.9 % 1,2,3,5 ACLR -37 -42 -33 -34 -40 dBC Notes (unless otherwise specified): 1. At 25C 2. Measurements are performed using Cree test fixture AD-938516 3. Under OQPSK modulated signal, 1.6 Msps, PN23, Alpha Filter = 0.2 4. Power Added Efficiency = (P - P ) / PDC OUT IN 5. Measured at P = 41 dBm OUT Features Applications 25 dB Small Signal Gain Point to Point Radio 30 W Typical P Communications SAT Operation up to 28 V Satellite Communication Uplink High Breakdown Voltage High Temperature Operation Size 1.00 x 0.385 inches Subject to change without notice. 1 www.cree.com/rf Rev 0.1 August 2017Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-source Voltage V 84 V 25C DSS DC Gate-source Voltage V -10, +2 V 25C GS DC Power Dissipation P 55 W DISS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 10 mA 25C GMAX 1 Soldering Temperature T 245 C S Screw Torque 40 in-oz Thermal Resistance, Junction to Case R 2.38 C/W CW, 85C, P = 43 W JC DISS Case Operating Temperature T -40, +150 C C Note: 1 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library Electrical Characteristics (Frequency = 5.5 GHz to 8.5 GHz unless otherwise stated T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -2.8 -2.3 V V = 10 V, I = 20.6 mA TH DS DS Saturated Drain Current I 16.4 18.6 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 84 100 V V = -8 V, I = 20.6 mA BD GS DS 3 RF Characteristics Small Signal Gain S21 26 dB V = 28 V, I = 285 mA, P = -20 dBm DD DQ IN Input Return Loss S11 -7 dB V = 28 V, I = 285 mA, P = -20 dBm DD DQ IN Output Return Loss S22 -7 dB V = 28 V, I = 285 mA, P = -20 dBm DD DQ IN No damage at all phase angles, V = 28 V, DD Y Output Mismatch Stress VSWR 5:1 I = 285 mA, P = 43 dBm DQ OUT Notes: 1 Measured on-wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in the CMPA5585030F-AMP Cree, Inc. Copyright 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are 4600 Silicon Drive registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 product and/or vendor endorsement, sponsorship or association. Fax: +1.919.869.2733 www.cree.com/rf 2 CMPA5585030F Rev 0.1