PN: CMPA601C025F Package Type: 440213 CMPA601C025F 25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier The CMPA601C025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 m gate length fabrication process. The semiconductor offers 25 Watts of power from 6 to 12 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a thermally-enhanced, 10- lead 25 mm x 9.9 mm metal/ceramic flanged package. It offers high gain and superior efficiency in a small footprint package at 50 ohms. Typical Performance Over 6.0-12.0 GHz (T = 25C) C Parameter 6.0 GHz 7.5 GHz 9.0 GHz 10.5 GHz 12.0 GHz Units Small Signal Gain 35 34 34 37 31 dB P P = 22 dBm 34 51 49 49.5 36.5 W OUT IN Power Gain P = 22 dBm 23 25 25 25 23.5 dB IN PAE P = 22 dBm 21 36 35 33 27 % IN Note: All data CW. Features Applications Jamming Amplifiers 34 dB Small Signal Gain Test Equipment Amplifiers 40 W Typical P SAT Broadband Amplifiers Operation up to 28 V High Breakdown Voltage High Temperature Operation Size 0.172 x 0.239 x 0.004 inches Subject to change without notice. 1 www.cree.com/rf Rev 3.0 May 2017Absolute Maximum Ratings (not simultaneous) at 25C Parameter Symbol Rating Units Conditions Drain-source Voltage V 84 V 25C DS DC Gate-source Voltage V -10, +2 V 25C GS DC Storage Temperature T -40, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 23 mA 25C GMAX 1 Soldering Temperature T 245 C STG Screw Torque T 40 in-oz 2 Thermal Resistance, Junction to Case R 0.85 C/W 85C P = 116 W JC DISS 2 Case Operating Temperature T -40, +150 C C 1 Note Refer to the Application Note on soldering at