V 900 V DS I 25C 23 A D E3M0120090D R 120 m DS(on) Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package 3rd generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Automotive Qualified (AEC-Q101) and PPAP Capable Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications Automotive EV battery chargers Renewable energy High voltage DC/DC converters Marking Part Number Package E3M0120090D TO-247-3 E3M0120090 Maximum Ratings (T = 25 C unless otherwise specified) C Parameter Value Unit Test Conditions Note Symbol Drain - Source Voltage 900 V V = 0 V, I = 100 A V GS D DSmax Gate - Source Voltage -8/+18 V Note: 1 V GSmax Gate - Source Voltage (Recommended operating values) -4/+15 V Note: 2 V GSop 23 Fig. 19 V = 15 V, T = 25C GS C Continuous Drain Current A I D 15 V = 15 V, T = 100C GS C I Pulsed Drain Current 50 A Fig. 22 Pulse width t limited by T D(pulse) jmax P P Power Dissipation 97 W T =25C, T = 150 C Fig. 20 C J D -55 to Operating Junction and Storage Temperature C T , T J stg +150 1.6mm (0.063) from case for T Solder Temperature 260 C L 10s 1 Nm Mounting Torque M3 or 6-32 screw M d 8.8 lbf-in Note (1): When using MOSFET Body Diode V = -4V/+18V GSmax Note (2): MOSFET can also safely operate at 0/+15 V 1 E3M0120090D Rev. - , 07-2018Electrical Characteristics (T = 25C unless otherwise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V Drain-Source Breakdown Voltage 900 V V = 0 V, I = 100 A (BR)DSS GS D 1.7 2.1 3.5 V VDS = VGS, ID = 3 mA V Gate Threshold Voltage Fig. 11 GS(th) 1.6 V V = V , I = 3 mA, T = 150C DS GS D J I Zero Gate Voltage Drain Current 1 100 A V = 900 V, V = 0 V DSS DS GS I Gate-Source Leakage Current 10 250 nA V = 15 V, V = 0 V GSS GS DS 120 155 VGS = 15 V, ID = 15 A Fig. 4, R Drain-Source On-State Resistance m DS(on) 5, 6 170 VGS = 15 V, ID = 15 A, TJ = 150C 7.7 V = 20 V, I = 15 A DS DS g Transconductance S Fig. 7 fs 6.7 V = 20 V, I = 15 A, T = 150C DS DS J Ciss Input Capacitance 350 Fig. 17, VGS = 0 V, VDS = 600 V C Output Capacitance 40 oss pF 18 f = 1 MHz C Reverse Transfer Capacitance 3 rss AC V = 25 mV E C Stored Energy 9 J Fig. 16 oss oss E Turn-On Switching Energy (Body Diode FWD) 170 ON V = 400 V, V = -4 V/15 V, I = 15 A, DS GS Fig. 26, D J 29 R = 2.5, L= 142 H, T = 150C J G(ext) E Turn Off Switching Energy (Body Diode FWD) 25 OFF td(on) Turn-On Delay Time 27 V = 400 V, V = -4 V/15 V DD GS tr Rise Time 10 I = 15 A, R = 2.5 , D G(ext) Fig. 27, ns Timing relative to V 29 DS t Turn-Off Delay Time 25 d(off) Inductive load t Fall Time 8 f , R Internal Gate Resistance 16 f = 1 MHz V = 25 mV G(int) AC Q Gate to Source Charge 4.8 gs VDS = 400 V, VGS = -4 V/15 V Q Gate to Drain Charge 5.0 I = 15 A gd nC D Fig. 12 Per IEC60747-8-4 pg 21 Qg Total Gate Charge 17.3 (T = 25C unless otherwise specified) Reverse Diode Characteristics C Symbol Parameter Typ. Max. Unit Test Conditions Note 4.8 V V = -4 V, I = 7.5 A GS SD Fig. 8, V Diode Forward Voltage SD 9, 10 4.4 V V = -4 V, I = 7.5 A, T = 150 C GS SD J I Continuous Diode Forward Current 21 A V = -4 V, T = 25C Note 1 S C GS I Diode pulse Current 50 A Note 1 S, pulse V = -4 V, pulse width t limited by T jmax GS P t Reverse Recover time 24 ns rr V = -4 V, I = 7.5 A, V = 400 V GS SD R Note 1 Q Reverse Recovery Charge 115 nC rr dif/dt = 900 A/s, T = 150 C J I Peak Reverse Recovery Current 6.2 A rrm Thermal Characteristics Symbol Parameter Max. Unit Test Conditions Note R Thermal Resistance from Junction to Case 1.3 JC C/W Fig. 21 RJA Thermal Resistance From Junction to Ambient 40 Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode 2 E3M0120090D Rev. - , 07-2018