Product Information

PTFA080551E-V4-R0

PTFA080551E-V4-R0 electronic component of Wolfspeed

Datasheet
RF MOSFET Transistors MOSFET

Manufacturer: Wolfspeed
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Warehouse 1

MOQ : 1
Multiples : 1
1 : USD 45.826
N/A

Obsolete
     
Manufacturer
Product Category
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Type
Brand
Number Of Channels
Product Type
Factory Pack Quantity :
Subcategory
Vgs Th - Gate-Source Threshold Voltage
Hts Code
LoadingGif

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PTFA080551E PTFA080551F PTFA080551E PTFA080551F Confidential, Limited Internal Distribution PTFA080551E/F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 960 MHz Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 960 MHz Description TDescriptionhe PTFA080551E and PTFA080551F are 55-watt LDMOS FETs PTFA080551E designed for EDGE and CDMA power amplifier applications in the Package H-36265-2 The PTFA080551E and PTFA080551F are 55-watt LDMOS FETs PTFA080551E 869 to 960 MHz band. Features include input matching and thermally- designed for EDGE and CDMA power amplifier applications in the Package H-36265-2 enhanced packages with slotted or earless flanges. Manufactured 869 to 960 MHz band. Features include input matching and thermally- with Infineon s advanced LDMOS process, these devices provide enhanced packages with slotted or earless flanges. Manufactured excellent thermal performance and superior reliability. PTFA080551F with WInolfspeed sfineon s advanced LDMOS process, these devices provide Package H-37265-2 excellent thermal performance and superior reliability. PTFA080551F Package H-37265-2 Features Three-carrier CDMA2000 Performance V = 28 V, I = 450 mA, = 960 MHz DD DQ F eBartouardebasnd internal matching Three-carrier CDMA2000 Performance Typical EDGE performance V = 28 V, I = 450 mA, = 960 MHz DD DQ Broadband internal matching - Average output power = 26 W 40 -35 Typical EDGE performance - Gain = 18 dB - Average output power = 26 W 35 Efficiency - Efficiency = 44% -40 40 -35 - Gain = 18 dB Typical CW performance 30 35 Efficiency -45 - Efficiency = 44% -40 - Output power at P1dB = 75 W 25 Typical CW performance - Gain = 17 dB 30 -50 ACP Low -45 - Output power at P1dB = 75 W - Efficiency = 67% 20 25 - Gain = 17 dB -55 ACP Up -50 ACP Low Integrated ESD protection: Human Body Model, 15 - Efficiency = 67% 20 Class 2 (minimum) -60 -55 ACP Up Integrated ESD protection: Human Body Model, 10 ALT Up Excellent thermal stability, low HCI drift 15 Class 2 (minimum) -65 -60 5 Capable of handling 10:1 VSWR 28 V, 55 W 10 ALT Up Excellent thermal stability, low HCI drift (CW) output power 0 -70 -65 5 Capable of handling 10:1 VSWR 28 V, 55 W Pb-free and RoHS compliant 29 31 33 35 37 39 41 43 (CW) output power 0 -70 Output Power, Avg. (dBm) Pb-free and RoHS compliant 29 31 33 35 37 39 41 43 Output Power, Avg. (dBm) RF Characteristics RF Characteristics Wolfspeed EDGE Measurements (not subject to production testverified by design/characterization in Infineon test fixture) V = 28 V, I = 450 mA, P = 26 W AVG, = 959.8 MHz DD DQ OUT EDGE Measurements (not subject to production testverified by design/characterization in Infineon test fixture) Characteristic Symbol Min Typ Max Unit V = 28 V, I = 450 mA, P = 26 W AVG, = 959.8 MHz DD DQ OUT Error Vector Magnitude EVM (RMS) 2.5 % Characteristic Symbol Min Typ Max Unit Modulation Spectrum 400 kHz ACPR 60 dBc Error Vector Magnitude EVM (RMS) 2.5 % Modulation Spectrum 600 kHz ACPR 75 dBc Modulation Spectrum 400 kHz ACPR 60 dBc Gain G 18 dB ps Modulation Spectrum 600 kHz ACPR 75 dBc Drain Efficiency 44 % D Gain G 18 dB ps Drain Efficiency 44 % All published data at T = 25C unless otherwise indicated CASE D All published data at T = 25C unless otherwise indicated *See Infineon distributor for future availability. CASE ESD: Electrostatic discharge sensitive deviceobserve handling precautions ESD: Electrostatic discharge sensitive deviceobserve handling precautions All published data at T = 25C unless otherwise indicated CASE *See Infineon distributor for future availability. DEaStaD S: hEeleecttrostatic discharge sensitive deviceobserve h1a nodf li1n1g precautions Rev. 0 5, 20 1 8 - 0 2 - 2 2 Rev. 06, 2018-08-09 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com Data Sheet 1 of 11 Rev. 0 5, 20 1 8 - 0 2 - 2 2 not recommended for new design DrainD Erfafiicni eEnffcicyi e(%nc)y (%) Adj. CAhd. j.P Cowh.e Pr oRwaetiro R (daBtioc) (dBc)PTFA080551E/F 2 Wolfspeed Ordering Information Type and Version Order Code Package Description Shipping PTFA080551E V4 R0 PTFA080551E-V4-R0 H-36265-2, bolt-down Tape & Reel, 50 pcs PTFA080551E V4 R250 PTFA080551E-V4-R250 H-36265-2, bolt-down Tape & Reel, 250 pcs PTFA080551F V4 R0 PTFA080551F-V4-R0 H-37265-2, earless flange Tape & Reel, 50 pcs PTFA080551F V4 R250 PTFA080551F-V4-R250 H-37265-2, earless flange Tape & Reel, 250 pcs Rev. 05, 2018-02-22 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com Rev. 06, 2018-08-09 not recommended for new design

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Wolfspeed
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