PTVA102001EA Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 1600 MHz Description The PTVA102001EA is a 200-watt LDMOS FET intended for use in power amplifier applications in the 960 to 1600 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed s advanced LDMOS process, this device provides excellent thermal perform- PTVA102001EA ance and superior reliability. Package H-36265-2 Features Power Sweep, Pulsed RF Input matched V = 50 V, I = 100 mA, T = 25C, DD DQ CASE Capable of handling 10:1 VSWR 50 V, 200 W 300s pulse width, 10% duty cycle (CW) output power Integrated ESD protection 65 70 Efficiency Low thermal resistance 60 60 Pb-free and RoHS compliant 55 50 50 40 Output Power 45 30 1030 MHz 1090 MHz 40 20 1030 MHz 1090 MHz 35 a102001ea 300us g1 10 20 25 30 35 40 P (dBm) IN RF Characteristics Pulsed RF Performance (tested in Wolfspeed production test fixture) V = 50 V, I = 100 mA, P = 200 W, = 1090 MHz, 300 s pulse width, 10% duty cycle DD DQ OUT Characteristic Symbol Min Typ Max Unit Gain G 17 18.5 dB ps Drain Efficiency h 56 59.5 % D All published data at T = 25C unless otherwise indicated CASE ESD: Electrostatic discharge sensitive deviceobserve handling precautions Rev. 04, 2018-06-12 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com P (dBm) OUT Efficiency (%) PTVA102001EA 2 RF Characteristics Typical RF Performance (not subject to production test, veriefi d by design/characterization in Wolfspeed test xfi ture) V = 50 V, I = 100 mA, Input signal (t = 5 ns, t = 6.5 ns), T = 25C, class AB test DD DQ r f CASE P P 1dB 3dB t t r f IRL P droop (pulse) Mode of Operation (ns) (ns) Gain Eff P Gain Eff P (MHz) (dB) 200 W OUT OUT (dB) (%) (W) (dB) (%) (W) 300 s, 10% Duty Cycle 1030 10 18.5 60 204 16.5 62 240 0.10 6.0 7.9 1 ms, 10% Duty Cycle 1030 10 18.3 60 200 16.3 62 235 0.20 20 ms, 10% Duty Cycle 1030 10 18.2 59 195 16.2 61 225 0.25 16 ms, 50% Duty Cycle 1030 10 18.2 58 190 16.2 60 215 0.30 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V = 0 V, I = 10 mA V( 105 V GS DS BR)DSS Drain Leakage Current V = 50 V, V = 0 V I 1 A DS GS DSS V = 111 V, V = 0 V I 10 A DS GS DSS Gate Leakage Current V = 10 V, V = 0 V I 1 A GS DS GSS On-State Resistance V = 10 V, V = 0.1 V R 0.34 W GS DS DS(on) Operating Gate Voltage V = 50 V, I = 100 mA V 3.1 3.35 3.5 V DS DQ GS Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V 105 V DSS Gate-Source Voltage V 6 to +12 V GS Operating Voltage V 0 to +55 V DD Junction Temperature T 225 C J Storage Temperature Range T 65 to +150 C STG Thermal Characteristics T = 70C, 167 W (CW), 50 V, I = 100 mA, 1030 MHz CASE DQ Characteristic Symbol Value Unit Thermal Resistance R 0.70 C/W JC q Rev. 04, 2018-06-12 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com