Product Information

XGP6508B

XGP6508B electronic component of XINGUAN

Datasheet
MOSFET 氮化镓功率晶体管 650V 21A 1.62V @ 250uA 150 mΩ @ 4A,8V TO-220 RoHS

Manufacturer: XINGUAN
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Availability Price Quantity
0 - Global Stock


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Stock Image

XGP6508B
XINGUAN

N/A

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Image Description
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The XGP6508B is a MOSFET power transistor manufactured by XINGUAN with a drain-to-source voltage of 650V and a continuous current rating of 21A. It features a drain-source on resistance of 150mΩ at 4A and 8V, a gate threshold voltage of 1.62V at 250uA, and a TO-220 form factor with RoHS compliance. This makes it suitable for applications such as motor control, heating control, DC/DC conversion, and general-purpose switching.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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