The YJS10N02A MOSFET with SOP-8 package has a ROHS-compliant construction that is manufactured by Yangjie. It is a dual P-channel enhancement mode MOSFET that uses a shallow trench isolation process, and comes with an optimized conduction loss, switching speed, and avalanche performance. It has a drain current rating of 10 A, a drain-source voltage rating of -20 V to -60 V, a gate-source voltage rating of -10 V to -20 V, a drain-source on-state resistance of 0.49 mO, a total gate charge of 8.4 nC, and a gate-source maximum voltage of ±20 V. It also has a package inductance of 8.8 nH, thermal resistance junction-to-ambient of 62.2 °C/W, and typical thermal resistance junction-to-case of 20 °C/W. As such, it is perfect for applications such as load switch, DC/DC converters, and battery power management circuit.