BLF642,112 NXP

BLF642 Broadband power LDMOS transistor Rev. 3 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Typical performance RF performance at T = 25 C in a common source test circuit. h Mode of operation f V P G IMD DS L p D (MHz) (V) (W) (dB) (%) (dBc) CW, class-AB 1300 32 35 19 63 - 2-tone, class-AB 1300 32 17.5 19 48 28 1.2 Features and benefits CW performance at 1300 MHz, a drain-source voltage V of 32 V and a quiescent DS drain current I =0.2 A : Dq Average output power = 35 W Power gain = 19 dB Drain efficiency = 63 % 2-tone performance at 1300 MHz, a drain-source voltage V of 32 V and a quiescent DS drain current I =0.2 A : Dq Average output power = 17.5 W Power gain = 19 dB Drain efficiency = 48 % Intermodulation distortion = 28 dBc Integrated ESD protection Excellent ruggedness High power gain High efficiency Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)BLF642 Broadband power LDMOS transistor 1.3 Applications Communication transmitter applications in the HF to 1400 MHz frequency range Industrial applications in the HF to 1400 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1drain 1 1 2gate 1 3source 3 2 3 2 sym112 1 Connected to flange 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF642 - flanged LDMOST ceramic package 2 mounting holes 2 leads SOT467C 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 +11 V GS T storage temperature 65 +150 C stg T junction temperature - 200 C j 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit 1 R thermal resistance from junction to case T = 80 C P = 35 W 1.6 K/W th(j-c) case L 1 R is measured under RF conditions. th(j-c) BLF642 3 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 1 September 2015 2 of 12