BLF647P,112 NXP

BLF647P Broadband power LDMOS transistor Rev. 3 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Application information RF performance at T = 25 C in a common source test circuit. h Test signal f V I P P G IMD3 DS Dq L(AV) L(M) p D (MHz) (V) (A) (W) (W) (dB) (%) (dBc) Pulsed, class-B 1300 32 0.1 - 200 18 70 - CW, class-B 1300 32 0.1 200 - 18 70 - 2-tone, class-AB f = 1299.95 f = 1300.05 32 0.7 75 - 19 48 33 1 2 1.2 Features and benefits Integrated ESD protection Excellent ruggedness High power gain High efficiency Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Communication transmitter applications in the HF to 1500 MHz frequency range Industrial applications in the HF to 1500 MHz frequency rangeBLF647P Broadband power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1drain1 1 2 1 2drain2 3gate1 3 4gate2 5 5 4 1 5source 3 4 2 sym117 1 Connected to flange 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF647P - flanged LDMOST ceramic package 2 mounting holes SOT1121A 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 +11 V GS T storage temperature 65 +150 C stg 1 T junction temperature -225 C j 1 Continuous use at maximum temperature will affect the reliability. For details refer to the on-line MTF calculator. 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit 1 R thermal resistance from junction to case T = 80 C P = 200 W 0.34 K/W th(j-c) case L 1 R is measured under RF conditions. th(j-c) BLF647P 3 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 1 September 2015 2 of 14