Product Information

FJ3303010L

FJ3303010L electronic component of Panasonic

Datasheet
MOSFET SM SIG MOS FET FLT LD 1.2x1.2mm

Manufacturer: Panasonic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

FJ3303010L
Panasonic

1 : USD 0.0561
10 : USD 0.0532
100 : USD 0.0524
N/A

Obsolete
0 - WHS 2

MOQ : 10000
Multiples : 10000

Stock Image

FJ3303010L
Panasonic

10000 : USD 0.0492
20000 : USD 0.0492
30000 : USD 0.0492
40000 : USD 0.0492
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

FJ3303010L
Panasonic

1 : USD 0.9062
10 : USD 0.6965
100 : USD 0.1574
500 : USD 0.1046
1000 : USD 0.0808
2500 : USD 0.0632
10000 : USD 0.0549
20000 : USD 0.0518
50000 : USD 0.0466
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Rds On
Factory Pack Quantity :
Product
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Doc No. TT4-EA-12653 Revision. 3 Product Standards MOS FET FJ3303010L FJ3303010L Silicon P-channel MOSFET Unit : mm For switching 1. 2 FJ350301 in SSSMini3 type package 0.3 0.13 3 Features Low drive voltage : 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 12 Marking Symbol : U1 0.2 0.52 (0 .4 ) (0.4) Packaging 0. 8 Embossed type (Thermo-compression sealing) :10 000 pcs / reel (standard) 1. Gate 2. Source Drain 3. Absolute Maximum Ratings Ta = 25 C Panasonic SSSMini3-F2-B JEITA SC-105AA Parameter Symbol Rating Unit Drain-source voltage VDS -30 V Code SOT-723 Gate-source voltage VGS 12 V Drain current ID -100 mA Pulse drain current IDp -200 mA Internal Connection Total power dissipation PD 100 mW (D) 3 Channel temperature Tch 150 Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +150 1 2 (G) (S) Pin Name 1. Gate 2. Source Drain 3. Page15of Established : 2010-06-25 Revised : 2013-10-10 0.8 1.2Doc No. TT4-EA-12653 Revision. 3 Product Standards MOS FET FJ3303010L Electrical Characteristics Ta = 25 C 3C Parameter Symbol Conditions Min Typ Max Unit Drain-source breakdown voltage VDSS ID = -1 mA, VGS = 0 -30 V Drain-source cutoff current IDSS VDS = -30 V, VGS = 0 -1.0 A Gate-source cutoff current IGSS VGS = 10 V, VDS = 0 10 A Gate threshold voltage VTH -0.5 -1.0 -1.5 V ID = -1.0 A, VDS = -3.0 V RDS(on)1 ID = -10 mA, VGS = -2.5 V 7 17 Drain-source ON resistance RDS(on)2 ID = -10 mA, VGS = -4.0 V 4 7 Forward transfer admittance |Yfs| ID = -10 mA, VDS = -3.0 V 20 40 mS Input capacitance Ciss 12 pF Output capacitance Coss VDS = -3 V, VGS = 0, f = 1 MHz 7 pF Reverse transfer capacitance Crss 3 pF VDD = -3 V, VGS = 0 to -3 V *1 ton 100 ns Turn-on time ID = -10 mA VDD = -3 V, VGS = -3 to 0 V *1 toff 100 ns Turn-off time ID = -10 mA Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 Turn-on and Turn-off test circuit VVDD=DD=-- 33VV 10 % IDID== -10m-10m AA RRLL=30=30 00 Vin 90 % DD VoVouutt ViVinn VGVGS=0S=0 -3V-3V GG 90 % 5050 Vout 10 % SS t(on) t(off) Page 2of 5 Established : 2010-06-25 Revised : 2013-10-10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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