Product Information

FK3306010L

FK3306010L electronic component of Panasonic

Datasheet
MOSFET COMPOSITE SM SIG MOS FLAT LEAD 1.2x1.2mm

Manufacturer: Panasonic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 10000
Multiples : 10000

Stock Image

FK3306010L
Panasonic

10000 : USD 0.0529
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

FK3306010L
Panasonic

1 : USD 0.945
10 : USD 0.8343
100 : USD 0.189
500 : USD 0.1253
1000 : USD 0.0961
2500 : USD 0.0756
10000 : USD 0.0573
20000 : USD 0.054
50000 : USD 0.0486
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Mounting Style
Package / Case
Packaging
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Rds On
Factory Pack Quantity :
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Doc No. TT4-EA-12592 Revision. 2 Product Standards MOS FET FK3306010L FK3306010L Silicon N-channel MOSFET Unit : mm For switching 1.2 FK350601 in SSSMini3 type package 0.3 0.13 3 Features Low drive voltage : 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 12 Marking Symbol : CV 0.2 0.52 (0.4) (0.4) Packaging 0.8 Embossed type (Thermo-compression sealing) :10 000 pcs / reel (standard) 1. Gate 2. Source Drain 3. Absolute Maximum Ratings Ta = 25 C Panasonic SSSMini3-F2-B JEITA SC-105AA Parameter Symbol Rating Unit Drain-source voltage VDS 60 V Code SOT-723 Gate-source voltage VGS 12 V Drain current ID 100 mA Pulse drain current IDp 200 mA Internal Connection Total power dissipation PD 100 mW (D) 3 Channel temperature Tch 150 C Operating Ambient Temperature Tstg -40 to + 85 C Storage temperature Tstg -55 to +150 C 1 2 (G) (S) Pin Name 1. Gate 2. Source Drain 3. Page15of Established : 2010-05-20 Revised : 2013-08-08 0.8 1.2Doc No. TT4-EA-12592 Revision. 2 Product Standards MOS FET FK3306010L Electrical Characteristics Ta = 25 C 3C Parameter Symbol Conditions Min Typ Max Unit Drain-source breakdown voltage VDSS ID = 1 mA, VGS = 0 60 V Drain-source cutoff current IDSS VDS = 60 V, VGS = 0 1.0 A Gate-source cutoff current IGSS VGS = 10 V, VDS = 0 10 A Gate threshold voltage VTH 0.9 1.2 1.5 V ID = 1.0 A, VDS = 3.0 V RDS(on)1 ID = 10 mA, VGS = 2.5 V 8 15 Drain-source ON resistance RDS(on)2 ID = 10 mA, VGS = 4.0 V 6 12 Forward transfer admittance Yfs ID = 10 mA, VDS = 3 V, f = 1 kHz 20 60 mS Input capacitance Ciss 12 pF Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz 7 pF Reverse transfer capacitance Crss 3 pF VDD = 3 V, VGS = 0 to 3 V, *1 ton 100 ns Turn-on time RL = 300 VDD = 3 V, VGS = 3 to 0 V, *1 toff 100 ns Turn-off time RL = 300 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 Turn-on and Turn-off test circuit VVDDDD=3V=3V IIDD=1=10m0mAA RRLL=3=30000 90% DD VoVoutut 10% V GS ViVinn VV GGSS==003V3V 10% GG V out 5050 90% SS ton toff Page 2of 5 Established : 2010-05-20 Revised : 2013-08-08

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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