2SD1834 Datasheet Medium Power Transistor (60V / 1A) llOutline SOT-89 Parameter Value SC-62 V 60V CES I 1A C MPT3 llFeatures llInner circuit 1)Darlington connection for high DC current gain. (typically,DC current gain=15000 at V =3V,I =0.5A) CE C 2)High input impedance. llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-89 2SD1834 4540 T100 180 12 1000 DE (MPT3) www.rohm.com 1/6 20160212 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. 2SD1834 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 60 V CBO V Collector-emitter voltage 60 V CES V Emitter-base voltage 7 V EBO I Collector current 1 A C *1 P 0.5 W D Power dissipation *2 P 2.0 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BV I = 50A 60 - - V CBO C Collector-emitter breakdown BV I = 100A, R = 0 60 - - V CES C BE voltage BV I = 50A Emitter-base breakdown voltage 7 - - V EBO E I Collector cut-off current V = 60V - - 1.0 A CBO CB I V = 6V Emitter cut-off current - - 1.0 A EBO EB Collector-emitter saturation voltage V I = 500mA, I = 0.5mA - 0.9 1.5 V CE(sat) C B h DC current gain V = 3V, I = 500mA 2k - - - FE CE C V = 5V, I = -10mA, CE E *3 Transition frequency - 150 - MHz f T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 7 - pF ob f = 1MHz *1 Each terminal mounted on a reference land *2 Mounted on a ceramic board. (40400.7mm) *3 Characteristics of built-in transistor www.rohm.com 2/6 2016 ROHM Co., Ltd. All rights reserved. 20160212 - Rev.001