Product Information

2SD1898T100Q

Product Image X-ON

Datasheet
Bipolar (BJT) Transistor NPN 80 V 1 A 100MHz 2 W Surface Mount MPT3

Manufacturer: ROHM
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Manufacturer
ROHM
Product Category
Bipolar Transistors - BJT
RoHS - XON
Y Icon ROHS
Mounting Style
Smd/Smt
Package / Case
SOT - 89
Transistor Polarity
Npn
Configuration
Single
Maximum DC Collector Current
1 A
Collector- Emitter Voltage VCEO Max
80 V
Collector- Base Voltage VCBO
120 V
Emitter- Base Voltage VEBO
5 V
Pd - Power Dissipation
500 mW (1/2 w)
Gain Bandwidth Product fT
100 Mhz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Series
2Sd1898
Packaging
Reel
Dc Current Gain Hfe Max
390
Brand
Rohm Semiconductor
Continuous Collector Current
1 A
Dc Collector/Base Gain Hfe Min
82
Maximum Power Dissipation
0.5 W
Factory Pack Quantity :
1000
Height
1.5 mm
Length
4.5 mm
Cnhts
8541290000
Hts Code
8541290095
Mxhts
85412999
Product Type
Bjts - Bipolar Transistors
Subcategory
Transistors
Taric
8541290000
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2SD1898 / 2SD1733 Datasheet NPN 1.0A 80V Middle Power Transistor lOutline Collector MPT3 CPT3 Parameter Value V 80V CEO Base Collector I 1.0A C Emitter Base Emitter 2SD1898 2SD1733 lFeatures (SC-62) (SC-63) 1) Suitable for Middle Power Driver <SOT-89> <SOT-428> 2) Complementary PNP Types : 2SB1260 / 2SB1181 3) Low V CE(sat) V = 0.4V Max. (I /I =500mA/20mA) CE(sat) C B 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplications Motor driver , LED driver Base Power supply Emitter lPackaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) 2SD1898 MPT3 4540 T100 180 12 1,000 DF 2SD1733 CPT3 6595 TL 330 16 2,500 D1733 www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.05 - Rev.F 1/7Data Sheet 2SD1898 / 2SD1733 lAbsolute maximum ratings (Ta = 25C) Parameter Symbol Values Unit V 120 V Collector-base voltage CBO V Collector-emitter voltage 80 V CEO V Emitter-base voltage 5 V EBO I DC 1.0 A C Collector current *1 2.0 A Pulsed I CP *2 W 0.5 2SD1898 *3 W 2.0 P Power dissipation D *4 W 1 2SD1733 *5 W 10 T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg *1 Pw=20ms , duty=1/2 *2 Each terminal mounted on a reference land *3 Mounted on a ceramic board (40400.7 mm) *4 Mounted on a substrate *5 T =25C C lElectrical characteristics (Ta = 25C) Parameter Symbol Conditions Min. Typ. Max. Unit Collector-emitter BV I = 1mA 80 - - V CEO C breakdown voltage Collector-base BV I = 50mA 120 - - V CBO C breakdown voltage Emitter-base BV I = 50mA 5 - - V EBO E breakdown voltage Collector cut-off current I V = 100V - - 1 mA CBO CB Emitter cut-off current I V = 4V - - 1 mA EBO EB Collector-emitter V I = 500mA, I = 20mA - 0.15 0.40 V CE(sat) C B saturation voltage *6 V = 3V, I = 0.5A DC current gain 120 - 390 - h CE C FE V = 10V, I = -50mA CE E f Transition frequency - 100 - MHz T f=100MH Z V = 10V, I = 0A CB E C Output capacitance - 20 - pF ob f = 1MHz lh rank categories FE Rank Q R h 120 to 270 180 to 390 FE www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.05 - Rev.F 2/7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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