RFN20TF6SFHC9

Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20TF6SFH Serise Dimensions(Unit : mm) Structure Standard Fast Recovery Applications General rectification RFN20 TF6S Features 1)Low switching loss 2)High current overload capacity Construction Silicon epitaxial planer type ROHM : TO220NFM Manufacture Year Manufacture Week Absolute Maximum Ratings(Tc=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 600 V RM Reverse voltage V Direct voltage 600 V R Average rectified foward current 60Hz half sin wave , Resistive load Tc=51C 20 Io A Forward current surge peak I 60Hz half sin wave , Non-repetitive at Tj=25C 100 A FSM Junction temperature 150 Tj C Storage temperature Tstg 55 to 150 C Electrical Characteristics(Tj=25C) Parameter Conditions Min. Typ. Max. Symbol Unit V I =20A 1.25 1.55 Forward voltage F V F V =600V Reverse current I 0.05 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 40 60 ns F R R Thermal resistance Rth(j-c) Junction to case 2.5 C/W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A Data Sheet RFN20TF6SFH 100 100000 Tj=150 C 10000 Tj=125 C 10 1000 Tj=75 C Tj=150 C 100 Tj=125 C Tj=25 C 1 Tj=75 C 10 Tj=25 C 0.1 1 0 500 1000 1500 2000 2500 0 200 400 600 FORWARD VOLTAGE:V (mV) REVERSE VOLTAGE:V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1400 1000 I =20A V =600V F R Tj=25 C Tj=25 C 1350 1300 AVE:53.3nA 1250 100 AVE:1282mV 1200 1150 1100 10 V DISPERSION MAP F I DISPERSION MAP R 1000 350 f=1MHz 345 f=1MHz V =0V R 340 Tj=25 C 335 100 330 325 320 10 315 AVE:322pF 310 305 300 1 0 5 10 15 20 25 30 Ct DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) FORWARD CURRENT:I (A) F F TERMINALS:Ct(pF) CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R REVERSE CURRENT:I (nA) R TERMINALS:Ct(pF)