Product Information

RFN30TS6SGC11

Name: RFN30TS6SGC11
Brand: ROHM
SKU: RFN30TS6SGC11_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

RFN30TS6SGC11 electronic component of ROHM

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Datasheet

Diodes - General Purpose, Power, Switching 600V Vrm 30A Io Recovery Diode

Manufacturer: ROHM

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

450: USD 2.5564 ea
Line Total: USD 1150.38

0 - Global Stock

MOQ: 450 Multiples: 450
Pack Size: 450

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Wed. 22 May to Tue. 28 May MOQ : 450 Multiples : 450 RFN30TS6SGC11 ROHM	450 : USD 3.2294

0 - WHS 2 Ships to you between Tue. 28 May to Thu. 30 May MOQ : 450 Multiples : 450 RFN30TS6SGC11 ROHM	450 : USD 2.415 900 : USD 2.2885 2250 : USD 2.2425 4950 : USD 2.2425 9900 : USD 2.2425

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Additional Infomation About Product

Super Fast Recovery Diode RFN30TS6S Data Sheet lSerise lDimensions (Unit : mm) lStructure Standard Fast Recovery lApplication General rectification RFN30 TS6S 1 2 lFeatures 1) Low switching loss Low forward voltage 2) 3) High current overload capacity lConstruction ROHM : TO247 Silicon epitaxial planar type 1 : Manufacture Year 2 : Manufacture Week lAbsolute maximum ratings (T = 25C) a Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 600 V RM V Direct voltage 600 Reverse voltage V R Average current I 60Hz half sin wave, Resistive load 30 A o 60Hz half sin wave, Non-repetitive Non-repetitive forward surge current I 200 A FSM at T =25C, 1-3 pin common j T Operating junction temperature - 150 C j T - Storage temperature -55 to +150 C stg lElectrical characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit V I =30A Forward voltage 1.0 1.3 1.55 V F F V =600V Reverse current I - 0.05 10 R mA R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr - 36 60 ns F R R R Junction to case C / W Thermal resistance - - 0.8 th(j-c) www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.06 - Rev.A 1/4Data Sheet RFN30TS6S lElectrical characteristic curves 100000 100 T = 150 C j T = 125 C 10000 j T = 150 C j 10 T = 125 C j T = 75 C j 1000 T = 75 C j 1 100 T = 25 C j T = 25 C j 0.1 10 1-3 pin common 1-3 pin common 0.01 1 0 100 200 300 400 500 600 0 500 1000 1500 2000 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 T = 25 C f = 1MHz j T = 25 C 1-3 pin common a 100 100 10 I FSM 8.3ms 8.3ms 1cyc. 10 1 0 5 10 15 20 25 30 1 10 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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