Product Information

RFN3BGE6STL

RFN3BGE6STL electronic component of ROHM

Datasheet
Diodes - General Purpose, Power, Switching 600V Vrm; 3A Io TO-252 Rec Diode
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8899 ea
Line Total: USD 0.89

592 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
577 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 0.7866
10 : USD 0.6969
100 : USD 0.4945
500 : USD 0.4244
1000 : USD 0.3646
2500 : USD 0.3243
5000 : USD 0.3209
10000 : USD 0.3105
25000 : USD 0.3071

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Packaging
Brand
Operating Temperature Range
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
LoadingGif

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Additional Infomation About Product

Super Fast Recovery Diode RFN3BGE6S Datasheet Series Dimensions (Unit : mm) Land Size Figure (Unit : mm) 6.0 Standard Fast Recovery Application 1.6 1.6 General rectification 2.3 2.3 TO-252 Features Cathode 1) Low switching loss Structure ROHM : TO-252GE 2) Low forward voltage JEITA : - Manufacture Date Open Anode Construction Taping Dimensions (Unit : mm) Silicon epitaxial planar type Absolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Duty0.5 600 Repetitive peak reverse voltage V RM Reverse voltage V Direct voltage 600 V R I 60Hz half sin wave , Resistive load T =112C Average rectified foward current c 3 A o 60Hz half sin wave ,Non-repetitive at T=25C Forward current surge peak I 20 j A FSM T - 150 Operating junction temperature C j Storage temperature T - 55 to 150 C stg Electrical Characteristics (T = 25C) j Parameter Conditions Symbol Min. Typ. Max. Unit I =3A Forward voltage V - 1.35 1.55 V F F I V =600V Reverse current -0.05 10 A R R I =0.5A, I =1A, Irr=0.25I Reverse recovery time trr - 18 30 ns F R R Thermal resistance R Junction to case -- 6.0 C / W th(j-c) www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2018.06 - Rev.D 1/4 3.0 2.0 6.0Datasheet RFN3BGE6S Electrical characteristic curves 100 100000 T = 150 C j T = 125 C j 10000 10 1000 T = 75 C j 1 T = 150 C j 100 T = 125 C j T = 25 C j 0.1 T = 75 C j 10 T = 25 C j 0.01 1 0 500 1000 1500 2000 2500 0 100 200 300 400 500 600 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 f = 1MHz I FSM T = 25 C a 8.3ms 8.3ms 1cyc. 100 100 10 10 T = 25 C j 1 1 0 5 10 15 20 25 30 110 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2018.06 - Rev.D 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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