X-On Electronics has gained recognition as a prominent supplier of RFN20TJ6SGC9 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFN20TJ6SGC9 Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

RFN20TJ6SGC9 ROHM

RFN20TJ6SGC9 electronic component of ROHM
RFN20TJ6SGC9 ROHM
RFN20TJ6SGC9 Diodes - General Purpose, Power, Switching
RFN20TJ6SGC9  Semiconductors

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See Product Specifications
Part No. RFN20TJ6SGC9
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching 600V Vrm 20A Io TO220ACFP
Datasheet: RFN20TJ6SGC9 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.6 ea
Line Total: USD 2.6 
Availability - 2994
Ship by Wed. 04 Jun to Fri. 06 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2994
Ship by Wed. 04 Jun to Fri. 06 Jun
MOQ : 1
Multiples : 1
1 : USD 2.6
10 : USD 1.26
100 : USD 1.111
500 : USD 0.9405
5000 : USD 0.8195

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Packaging
Brand
Operating Temperature Range
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RFN20TJ6SGC9 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFN20TJ6SGC9 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Super Fast Recovery Diode RFN20TJ6S Data Sheet lSeries lDimensions (Unit : mm) lStructure 4.50.1 f3.10.1 Standard Fast Recovery 10.20.2 2.60.1 lApplication General rectification Anode Cathode RFN20 TJ6S 1 2 lFeatures 2.60.1 1) Low forward voltage 1.40.2 2) Low switching loss 3) High current overload capacity 0.60.1 2.540.1 0.830.1 lConstruction 5.080.1 Silicon epitaxial planar type ROHM : TO220ACFP 1 : Manufacture year, week,day, package code 2 : Serial number lAbsolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Duty0.5 600 Repetitive peak reverse voltage V RM V Direct reverse voltage 600 Reverse voltage V R I 60Hz half sin wave , resistive load T =50C Average current c 20 A o 60Hz half sin wave, one cycle, non-repetitive at T =25C Non-repetitive forward surge current I j 150 A FSM Operating junction temperature T - 150 C j Storage temperature T - -55 to +150 C stg lElectrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit T =25C 1.0 1.25 1.55 V j V I =20A Forward voltage F F T =125C - 1.1 - V j T =25C j - 0.1 10 mA I V =600V Reverse current R R T =125C j - 7 200 mA I =0.5A, I =1A, Irr=0.25I - 40 60 ns F R R Reverse recovery time trr I =20A, V =400V, dI /dt=-100A/ ms - 85 140 ns F R F I =20A, dI /dt=100A/ ms, Forward recovery time tfr - 300 - ns F F V V =1.1xV Forward recovery voltage - 3.2 - V Fp FR Fmax R (j-a) Junction to ambient - - 7.5 C/W th Thermal resistance R (j-c) Junction to case - - 2.5 C/W th www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.04 - Rev.A 1/5 3 16.00.1 9.560.2 3.950.1 13.51 28.560.2 9.050.1 6 15.050.1 Data Sheet RFN20TJ6S lElectrical Characteristic Curves 100000 100 T = 125 C T = 150 C j j 10000 10 T = 75 C 1000 j 1 T = 150 C j 100 T = 25 C j T = 125 C j 0.1 T = 75 C 10 j T = 25 C j 0.01 1 0 100 200 300 400 500 600 0 500 1000 1500 2000 2500 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 T = 25 C j f = 1MHz T = 25 C a 100 100 10 I FSM 8.3ms 8.3ms 1cyc. 10 1 0 5 10 15 20 25 30 1 10 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.04 - Rev.A 2/5 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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