Product Information

RFN2L4STE25

Hot RFN2L4STE25 electronic component of ROHM

Datasheet
Diodes - General Purpose, Power, Switching Fast Recovery Diodes
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

286: USD 0.138 ea
Line Total: USD 39.47

16943 - Global Stock
Ships to you between
Thu. 23 May to Wed. 29 May
MOQ: 286  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1427 - WHS 1


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4532
10 : USD 0.4008
30 : USD 0.3787
100 : USD 0.3505
500 : USD 0.3243
1500 : USD 0.3162

1330 - WHS 2


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.6514
10 : USD 0.566
100 : USD 0.401
500 : USD 0.3453
1000 : USD 0.3405
1500 : USD 0.2954
3000 : USD 0.2658
9000 : USD 0.2575
24000 : USD 0.2551

16943 - WHS 3


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 286
Multiples : 1
286 : USD 0.1338
500 : USD 0.1199
1000 : USD 0.116
1500 : USD 0.1149
3000 : USD 0.1109
6000 : USD 0.1071

921 - WHS 4


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 397
Multiples : 1
397 : USD 0.2426

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Maximum Operating Temperature
Packaging
Brand
Type
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Vr - Reverse Voltage
LoadingGif

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Additional Infomation About Product

Data Sheet Super Fast Recovery Diode RFN2L4S Serise Dimensions(Unit : mm) Land Size Figure(Unit : mm) Standard Fast Recovery 2.0 Applications General rectification 8 7 PMDS Features 1)Small power mold type(PMDS) 2)Low switching loss Structure 3)Low forward voltage ROHM : PMDS JEDEC : SOD-106 Manufacture Date Construction Silicon epitaxial planer type Taping Dimensions(Unit : mm) Absolute Maximum Ratings(Tl=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 400 V RM Reverse voltage V Direct voltage 400 V R On glass epoxy substrate, Average rectified foward current Io Tl=107C 1.5 A 60Hz half sin wave , Resistive load Forward current surge peak I 60Hz half sin wave , Non-repetitive at Tj=25C 50 A FSM Junction temperature Tj 150 C Storage temperature Tstg 55 to 150 C Electrical Characteristics(Tj=25C) Parameter Symbol Conditions Min. Typ. Max. Unit I =1.5A Forward voltage V F 0.88 1.2 V F I V =400V 0.01 1 Reverse current R A R I =0.5A,I =1A,Irr=0.25I 22 30 Reverse recovery time trr F R R ns Junction to lead 23 Thermal resistance Rth(j-l) C W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A 2.0 4.2 Data Sheet RFN2L4S 100 100000 Tj=150 C 10000 Tj=125 C 10 1000 Tj=150 C Tj=75 C Tj=125 C 100 Tj=75 C 1 Tj=25 C Tj=25 C 10 0.1 1 0 200 400 600 800 1000 1200 1400 1600 1800 0 100 200 300 400 FORWARD VOLTAGE:V (mV) REVERSE VOLTAGE:V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 960 1000 I =1.5A V =400V F R 940 Tj=25 C Tj=25 C 920 900 880 100 AVE:23.3nA 860 AVE:878mV 840 820 800 10 V DISPERSION MAP I DISPERSION MAP R F 1000 100 f=1MHz f=1MHz 95 V =0V R 90 Tj=25 C 85 100 80 AVE:67.5pF 75 70 10 65 60 55 50 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:V (V) Ct DISPERSION MAP R V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD VOLTAGE:V (mV) FORWARD CURRENT:I (A) F F CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:I (nA) REVERSE CURRENT:I (nA) R R

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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