X-On Electronics has gained recognition as a prominent supplier of SI2304BDS-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2304BDS-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2304BDS-T1-E3 Vishay

Hot SI2304BDS-T1-E3 electronic component of Vishay
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Part No.SI2304BDS-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V 3.2A 0.07Ohm
Datasheet: SI2304BDS-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.0205 ea
Line Total: USD 0.02 
Availability - 2
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 0.0205

17294
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 5
Multiples : 1
5 : USD 0.6344
10 : USD 0.469
100 : USD 0.2814
500 : USD 0.2619
1000 : USD 0.2459
5000 : USD 0.2202

64
Ship by Thu. 14 Nov to Tue. 19 Nov
MOQ : 5
Multiples : 5
5 : USD 0.314
50 : USD 0.2516
150 : USD 0.225
500 : USD 0.1917
3000 : USD 0.1769
6000 : USD 0.168

170645
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4278
10 : USD 0.299
100 : USD 0.215
500 : USD 0.199
1000 : USD 0.1966
3000 : USD 0.1955

2910
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1436

17192
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 321
Multiples : 1
321 : USD 0.2553
3000 : USD 0.251

   
Manufacturer
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RoHS - XON
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Minimum Operating Temperature
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Configuration
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Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the SI2304BDS-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2304BDS-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si2304BDS Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.070 at V = 10 V 3.2 TrenchFET Power MOSFET GS 30 2.6 0.105 at V = 4.5 V 2.6 100 % R Tested GS g Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G 1 3 D S 2 Top View Si2304BDS (L4)* * Marking Code Ordering Information: Si2304BDS-T1-E3 (Lead (Pb)-free) Si2304BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol 5 sSteady State Unit V Drain-Source Voltage 30 DS V V Gate-Source Voltage 20 GS T = 25 C 3.2 2.6 A a, b I Continuous Drain Current (T = 150 C) D J T = 70 C 2.5 2.1 A A Pulsed Drain Current I 10 DM a, b I 0.9 0.62 Continuous Source Current (Diode Conduction) S T = 25 C 1.08 0.75 A a, b P W Maximum Power Dissipation D T = 70 C 0.69 0.48 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 90 115 a R Maximum Junction-to-Ambient thJA Steady State 130 166 C/W R Maximum Junction-to-Foot (Drain) Steady State 60 75 thJF Notes: a. Surface mounted on FR4 board, t 5 s. b. Pulse width limited by maximum junction temperature. c. Surface mounted on FR4 board. For SPICE model information via the Worldwide Web: Si2304BDS Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) A Limits Parameter Symbol Test Conditions Unit Min. Typ. Max. Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 (BR)DSS GS D V Gate-Threshold Voltage V V = V , I = 250 A 1.5 3 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 30 V, V = 0 V 0.5 DS GS I V = 30 V, V = 0 V, T = 55 C 10 A Zero Gate Voltage Drain Current DSS DS GS J V = 30 V, V = 1 V, T = 25 C 1 DS GS J a I V 4.5 V, V = 10 V 6A On-State Drain Current D(on) DS GS V = 10 V, I = 2.5 A 0.055 0.070 GS D a R Drain-Source On-Resistance DS(on) V = 4.5 V, I = 2 A 0.080 0.105 GS D a g V = 4.5 V, I = 2.5 A 6S Forward Transconductance fs DS D Diode Forward Voltage V I = 1.25 A, V = 0 V 0.8 1.2 V SD S GS Dynamic Gate Charge Q V = 15 V, V = 5 V, I = 2.5 A 2.6 4 g DS GS D Total Gate Charge Q 4.6 7 gt nC Gate-Source Charge Q V = 15 V, V = 10 V, I = 2.5 A 0.8 gs DS GS D Q Gate-Drain Charge 1.15 gd Gate Resistance R f = 1 MHz 0.6 3 6 g Input Capacitance C 225 iss V = 15 V, V = 0 V, f = 1 MHz Output Capacitance C 50 pF DS GS oss Reverse Transfer Capacitance C 28 rss Switching Turn-On Delay Time t 7.5 12 d(on) V = 15 V, R = 15 Rise Time t 12.5 20 r DD L ns I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 19 30 D GEN g d(off) Fall Time t 15 25 f Notes: a. Pulse test: PW 300 s, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 10 10 V = 10 thru 5 V GS 8 8 6 6 4 4 4 V T = 125 C C 2 2 25 C - 55 C 3 V 0 0 0 2468 10 0 1234 5 V - Drain-to-Source Voltage (V) DS V - Gate-to-Source Voltage (V) GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72503 2 S11-1908-Rev. E, 26-Sep-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Drain Current (A) D I - Drain Current (A) D

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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