X-On Electronics has gained recognition as a prominent supplier of SI2304BDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2304BDS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2304BDS-T1-GE3 Vishay

SI2304BDS-T1-GE3 electronic component of Vishay
SI2304BDS-T1-GE3 Vishay
SI2304BDS-T1-GE3 MOSFETs
SI2304BDS-T1-GE3  Semiconductors

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See Product Specifications
Part No. SI2304BDS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V 3.2A 1.08W 70mohm @ 10V
Datasheet: SI2304BDS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1211 ea
Line Total: USD 363.3 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
116
Ship by Fri. 16 May to Wed. 21 May
MOQ : 5
Multiples : 5
5 : USD 0.303
50 : USD 0.2678
150 : USD 0.1895
500 : USD 0.1578
3000 : USD 0.152
6000 : USD 0.1487

   
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We are delighted to provide the SI2304BDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2304BDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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SI2304BDS-T1-GE3 is a power MOSFET manufactured by Vishay. It is an N-channel enhancement mode transister optimized for high speed switching applications. It has an integrated body diode with dual ESD (electro-static discharge) protection. It has a RDS(on) of 70 mO @ 10V, V(Drain-Source) of 30V, an Id of 3.2A and a Ptot of 1.08W. It is packaged in a 3-pin SOT-23 plastic package with a Low profile body which ensures good thermal stability. This device provides high power density and excellent gate charge characteristics in a small package, making it well-suited for a variety of design applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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