X-On Electronics has gained recognition as a prominent supplier of W979H2KBQX2I DRAM across the USA, India, Europe, Australia, and various other global locations. W979H2KBQX2I DRAM are a product manufactured by Winbond. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

W979H2KBQX2I Winbond

W979H2KBQX2I electronic component of Winbond
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Part No.W979H2KBQX2I
Manufacturer: Winbond
Category: DRAM
Description: LPDDR2 IS AHIGH-SPEED SDRAM DEVICE
Datasheet: W979H2KBQX2I Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Availability Price Quantity
0
MOQ : 168
Multiples : 1
168 : USD 7.189
1680 : USD 6.9875
16800 : USD 5.8201
84000 : USD 5.2208
168000 : USD 5.2156
N/A

0
MOQ : 168
Multiples : 168
168 : USD 5.6005
504 : USD 5.336
1008 : USD 5.1175
2520 : USD 4.9565
5040 : USD 4.8875
10080 : USD 4.7495
N/A

0
MOQ : 2
Multiples : 1
2 : USD 5.9289
N/A

   
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We are delighted to provide the W979H2KBQX2I from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the W979H2KBQX2I and other electronic components in the DRAM category and beyond.

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W979H6KB / W979H2KB LPDDR2-S4B 512Mb Table of Contents- 1. GENERAL DESCRIPTION ............................................................................................................................................ 6 2. FEATURES .................................................................................................................................................................... 6 3. ORDER INFORMATION ................................................................................................................................................ 7 4. PIN CONFIGURATION .................................................................................................................................................. 8 4.1 134 Ball VFBGA ............................................................................................................................................................. 8 4.2 168 Ball WFBGA ............................................................................................................................................................ 9 5. PIN DESCRIPTION ..................................................................................................................................................... 10 5.1 Basic Functionality ....................................................................................................................................................... 10 5.2 Addressing Table ......................................................................................................................................................... 11 6. BLOCK DIAGRAM ....................................................................................................................................................... 12 7. FUNCTIONAL DESCRIPTION ..................................................................................................................................... 13 7.1 Simplified LPDDR2 State Diagram .............................................................................................................................. 13 7.1.1 Simplified LPDDR2 Bus Interface State Diagram ......................................................................................................... 14 7.2 Power-up, Initialization, and Power-Off ........................................................................................................................ 15 7.2.1 Power Ramp and Device Initialization .......................................................................................................................... 15 7.2.2 Timing Parameters for Initialization .............................................................................................................................. 17 7.2.3 Power Ramp and Initialization Sequence .................................................................................................................... 17 7.2.4 Initialization after Reset (without Power ramp) ............................................................................................................. 18 7.2.5 Power-off Sequence .................................................................................................................................................... 18 7.2.6 Timing Parameters Power-Off ..................................................................................................................................... 18 7.2.7 Uncontrolled Power-Off Sequence .............................................................................................................................. 18 7.3 Mode Register Definition .............................................................................................................................................. 19 7.3.1 Mode Register Assignment and Definition ................................................................................................................... 19 7.3.1.1 Mode Register Assignment ............................................................................................................................... 19 7.3.2 MR0 Device Information (MA 7:0 = 00H) ................................................................................................................... 20 7.3.3 MR1 Device Feature 1 (MA 7:0 = 01H) ...................................................................................................................... 20 7.3.3.1 Burst Sequence by Burst Length (BL), Burst Type (BT), and Warp Control (WC) .............................................. 21 7.3.3.2 Non Wrap Restrictions ...................................................................................................................................... 21 7.3.4 MR2 Device Feature 2 (MA 7:0 = 02H) ...................................................................................................................... 22 7.3.5 MR3 I/O Configuration 1 (MA 7:0 = 03H) ................................................................................................................... 22 7.3.6 MR4 Device Temperature (MA 7:0 = 04H) ................................................................................................................. 22 7.3.7 MR5 Basic Configuration 1 (MA 7:0 = 05H) ............................................................................................................... 23 7.3.8 MR6 Basic Configuration 2 (MA 7:0 = 06H) ............................................................................................................... 23 7.3.9 MR7 Basic Configuration 3 (MA 7:0 = 07H) ............................................................................................................... 23 7.3.10 MR8 Basic Configuration 4 (MA 7:0 = 08H) ............................................................................................................... 23 7.3.11 MR9 Test Mode (MA 7:0 = 09H) ................................................................................................................................ 23 7.3.12 MR10 Calibration (MA 7:0 = 0AH) ............................................................................................................................. 24 7.3.13 MR16 PASR Bank Mask (MA 7:0 = 10H) .................................................................................................................. 24 7.3.14 MR32 DQ Calibration Pattern A (MA 7:0 = 20H) ........................................................................................................ 25 7.3.15 MR40 DQ Calibration Pattern B (MA 7:0 = 28H) ........................................................................................................ 25 7.3.16 MR63 Reset (MA 7:0 = 3FH): MRW only ................................................................................................................... 25 7.4 Command Definitions and Timing Diagrams ................................................................................................................ 25 7.4.1 Activate Command ...................................................................................................................................................... 25 7.4.1.1 Activate Command Cycle: tRCD = 3, tRP = 3, tRRD = 2 ................................................................................... 25 7.4.1.2 Command Input Setup and Hold Timing............................................................................................................ 26 7.4.1.3 CKE Input Setup and Hold Timing .................................................................................................................... 26 7.4.2 Read and Write Access Modes.................................................................................................................................... 27 7.4.3 Burst Read Command ................................................................................................................................................. 27 7.4.3.1 Data Output (Read) Timing (tDQSCKmax) ........................................................................................................ 27 7.4.3.2 Data Output (Read) Timing (tDQSCKmin) ......................................................................................................... 28 7.4.3.3 Burst Read: RL = 5, BL = 4, tDQSCK > tCK ...................................................................................................... 28 7.4.3.4 Burst Read: RL = 3, BL = 8, tDQSCK < tCK ...................................................................................................... 29 Publication Release Date: Feb. 18, 2016 Revision: A01-003 - 1 - W979H6KB / W979H2KB 7.4.3.5 LPDDR2: tDQSCKDL Timing ............................................................................................................................ 29 7.4.3.6 LPDDR2: tDQSCKDM Timing ........................................................................................................................... 30 7.4.3.7 LPDDR2: tDQSCKDS Timing............................................................................................................................ 30 7.4.3.8 Burst Read Followed by Burst Write: RL = 3, WL = 1, BL = 4 ............................................................................ 31 7.4.3.9 Seamless Burst Read: RL = 3, BL= 4, tCCD = 2 ............................................................................................... 31 7.4.4 Reads Interrupted by a Read ....................................................................................................................................... 32 7.4.4.1 Read Burst Interrupt Example: RL = 3, BL= 8, tCCD = 2 ................................................................................... 32 7.4.5 Burst Write Operation .................................................................................................................................................. 32 7.4.5.1 Data Input (Write) Timing .................................................................................................................................. 33 7.4.5.2 Burst Write: WL = 1, BL= 4 ............................................................................................................................... 33 7.4.5.3 Burst Wirte Followed by Burst Read: RL = 3, WL= 1, BL= 4 .............................................................................. 34 7.4.5.4 Seamless Burst Write: WL= 1, BL = 4, tCCD = 2............................................................................................... 34 7.4.6 Writes Interrupted by a Write ....................................................................................................................................... 35 7.4.6.1 Write Burst Interrupt Timing: WL = 1, BL = 8, tCCD = 2 .................................................................................... 35 7.4.7 Burst Terminate ........................................................................................................................................................... 35 7.4.7.1 Burst Write Truncated by BST: WL = 1, BL = 16 ............................................................................................... 36 7.4.7.2 Burst Read Truncated by BST: RL = 3, BL = 16 ................................................................................................ 36 7.4.8 Write Data Mask .......................................................................................................................................................... 37 7.4.8.1 Write Data Mask Timing .................................................................................................................................... 37 7.4.9 Precharge Operation ................................................................................................................................................... 38 7.4.9.1 Bank Selection for Precharge by Address Bits .................................................................................................. 38 7.4.10 Burst Read Operation Followed by Precharge ............................................................................................................. 38 7.4.10.1 Burst Read Followed by Precharge: RL = 3, BL = 8, RU(tRTP(min)/tCK) = 2 .................................................... 39 7.4.10.2 Burst Read Followed by Precharge: RL = 3, BL = 4, RU(tRTP(min)/tCK) = 3 .................................................... 39 7.4.11 Burst Write Followed by Precharge ............................................................................................................................. 40 7.4.11.1 Burst Write Follwed by Precharge: WL = 1, BL = 4............................................................................................ 40 7.4.12 Auto Precharge Operation ........................................................................................................................................... 41 7.4.13 Burst Read with Auto-Precharge ................................................................................................................................. 41 7.4.13.1 Burst Read with Auto-Precharge: RL = 3, BL = 4, RU(tRTP(min)/tCK) = 2 ........................................................ 41 7.4.14 Burst Write with Auto-Precharge .................................................................................................................................. 42 7.4.14.1 Burst Write with Auto-Precharge: WL = 1, BL = 4 .............................................................................................. 42 7.4.14.2 Precharge & Auto Precharge Clarification ......................................................................................................... 43 7.4.15 Refresh Command ...................................................................................................................................................... 44 7.4.15.1 Command Scheduling Separations Related to Refresh ..................................................................................... 44 7.4.16 LPDDR2 SDRAM Refresh Requirements .................................................................................................................... 45 7.4.16.1 Definition of tSRF .............................................................................................................................................. 45 7.4.16.2 Regular, Distributed Refresh Pattern ................................................................................................................. 46 7.4.16.3 Allowable Transition from Repetitive Burst Refresh ........................................................................................... 47 7.4.16.4 NOT-Allowable Transition from Repetitive Burst Refresh .................................................................................. 47 7.4.16.5 Recommended Self-Refresh Entry and Exit ...................................................................................................... 48 7.4.16.6 All Bank Refresh Operation ............................................................................................................................... 48 7.4.17 Self Refresh Operation ................................................................................................................................................ 49 7.4.18 Partial Array Self-Refresh: Bank Masking .................................................................................................................... 50 7.4.19 Mode Register Read Command .................................................................................................................................. 51 7.4.19.1 Mode Register Read Timing Example: RL = 3, tMRR = 2 .................................................................................. 51 7.4.19.2 Read to MRR Timing Example: RL = 3, tMRR = 2 ............................................................................................ 52 7.4.19.3 Burst Write Followed by MRR: RL = 3, WL = 1, BL = 4 ..................................................................................... 52 7.4.20 Temperature Sensor.................................................................................................................................................... 53 7.4.20.1 Temperature Sensor Timing ............................................................................................................................. 54 7.4.20.2 DQ Calibration .................................................................................................................................................. 54 7.4.20.3 MR32 and MR40 DQ Calibration Timing Example: RL = 3, tMRR = 2 ............................................................... 55 7.4.21 Mode Register Write Command................................................................................................................................... 56 7.4.21.1 Mode Register Write Timing Example: RL = 3, tMRW = 5 ................................................................................. 56 7.4.21.2 Truth Table for Mode Register Read (MRR) and Mode Register Write (MRW) .................................................. 56 7.4.22 Mode Register Write Reset (MRW Reset) ................................................................................................................... 57 7.4.23 Mode Register Write ZQ Calibration Command ........................................................................................................... 57 Publication Release Date: Feb. 18, 2016 Revision: A01-003 - 2 -

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8542.32.00 -- Memories
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WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA
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