About IGBT Transistors

IXYS IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXBH6N170


IGBT Transistors 12 Amps 1700V 3.6 Rds
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IXYS 268
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USD 6.9575
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Single1700 V2.3 V20 V    TO - 247AD - 3TubeSiThrough Hole - 55 C+ 150 CIxbh6n170
IXXH40N65B4


IGBT Transistors 650V/120A TRENCH IGBT GENX4 XPT
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IXYS 258
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USD 4.927
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Single650 V1.5 V20 V120 A100 nA  TO - 247AD - 3TubeSiThrough Hole455 W- 55 C+ 175 CIxxh40n65
IXYA20N65C3D1


IGBT Transistors Disc IGBT XPT-GenX3 TO-263D2
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IXYS 246
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USD 3.433
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Single650 V2.27 V20 V50 A100 nA  TO - 263AA - 3 SiSmd/Smt200 W- 55 C+ 175 C 
IXGA48N60A3


IGBT Transistors 48 Amps 600V
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IXYS 225
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USD 4.1353
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         TubeSi    Ixga48n60
IXGH50N90B2


IGBT Transistors 50 Amps 900V 2.7 Rds
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IXYS 185
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USD 7.1064
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Single900 V 20 V    TO - 247AD - 3TubeSiThrough Hole - 55 C+ 150 CIxgh50n90
IXXH75N60C3D1


750W 150A 600V TO-247AD IGBTs ROHS
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IXYS 169
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USD 6.3074
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         TubeSi     
IXYA20N120C4HV


IGBT Transistors IGBT 4TH GENERATION GENX4
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IXYS 169
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USD 7.6327
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         Tube      
IXGH35N120B


IGBT Transistors 70 Amps 1200V 3.3 Rds
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IXYS 164
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USD 15.2566
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Single1200 V +/- 20 V    TO - 247 - 3Tube Through Hole - 55 C+ 150 CIxgh35n120
IXYX110N120B4


IGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT PLUS247
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IXYS 156
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USD 14.3076
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Single1200 V - 30 V , + 30 V340 A    TubeSiThrough Hole1360 W- 55 C+ 175 C1200V XPTTM Gen 4
IXYP8N90C3D1


IGBT Transistors XPT 900V IGBT GenX3 XPT IGBTs
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IXYS 154
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USD 3.588
Multiples of: 1

Single900 V2.15 V30 V20 A100 nA  TO - 220 - 3TubeSiThrough Hole125 W- 55 C+ 175 CIxyp8n90
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