TM XPT 650V IGBT V = 650V IXXH40N65B4 CES TM GenX4 I = 40A C110 V 2.0V CE(sat) t = 46ns fi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings V T = 25C to 175C 650 V CES J V T = 25C to 175C, R = 1M 650 V CGR J GE G V Continuous 20 V GES C Tab E V Transient 30 V GEM I T = 25C 115 A C25 C G = Gate C = Collector I T = 110C 40 A C110 C E = Emitter Tab = Collector I T = 25C, 1ms 225 A CM C SSOA V = 15V, T = 150C, R = 5 I = 80 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES t V = 15V, V = 360V, T = 150C 10 s sc GE CE J Features (SCSOA) R = 82, Non Repetitive G Optimized for 5-30kHz Switching P T = 25C 455 W C C Square RBSOA T -55 ... +175 C J Avalanche Rated T 175 C Short Circuit Capability JM International Standard Package T -55 ... +175 C stg T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C Advantages SOLD M Mounting Torque 1.13/10 Nm/lb.in d High Power Density Weight 6g Extremely Rugged Low Gate Drive Requirement Applications Power Inverters UPS Motor Drives Symbol Test Conditions Characteristic Values SMPS (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J PFC Circuits BV I = 250 A, V = 0V 650 V CES C GE Battery Chargers V I = 250 A, V = V 4.0 6.5 V Welding Machines GE(th) C CE GE Lamp Ballasts I V = V , V = 0V 5 A CES CE CES GE T = 150C 250 A J I V = 0V, V = 20V 100 nA GES CE GE V I = 40A, V = 15V, Note 1 1.66 2.00 V CE(sat) C GE T = 150C 1.94 V J 2017 IXYS CORPORATION, All Rights Reserved DS100526C(3/17)IXXH40N65B4 Symbol Test Conditions Characteristic Values TO-247 (IXYH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J D A A B 0P 0K M D B M A2 E g I = 40A, V = 10V, Note 1 14 24 S fs C CE Q S D2 R C 2130 pF ies D1 D C V = 25V, V = 0V, f = 1MHz 110 pF 0P1 oes CE GE 4 R1R1R1R1 C 30 pF 1 2 3 res IXYS OPTION L1 C Q 66 nC g(on) E1 L Q I = 40A, V = 15V, V = 0.5 V 14 nC ge C GE CE CES Q 23 nC gc A1 b c b2 t 20 ns b4 d(on) 1 - Gate e 2,4 - Collector t 60 ns Inductive load, T = 25C J M C A M ri J 3 - Emitter E 1.4 mJ I = 40A, V = 15V on C GE t 115 ns V = 400V, R = 5 d(off) CE G t 46 ns fi Note 2 E 0.8 mJ f of t 20 ns d(on) Inductive load, T = 150C t 47 ns J ri I = 40A, V = 15V E 2.5 mJ C GE on V = 400V, R = 5 t 136 ns CE G d(off) t 116 ns Note 2 fi E 1.3 mJ off R 0.33 C/W thJC R 0.21 C/W thCS Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537