About IGBT Transistors

Ixys IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXBH20N360HV


IGBT Transistors IGBT BIMSFT-VERY HIVOLT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS Availability : 99
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USD 127.3612
Multiples of: 1

Single3600 V2.9 V20 V70 A   TO - 247HV - 3TubeSiThrough Hole430 W- 55 C+ 150 C 
IXA12IF1200HB


IGBT Transistors XPT IGBT Copack
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IXYS Availability : 86
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USD 3.4471
Multiples of: 1

Single1200 V1.8 V20 V20 A500 nA  TO - 247 - 3TubeSiThrough Hole85 W- 55 C+ 150 CIxa12if1200
IXXH30N60B3D1


IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT
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IXYS Availability : 74
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USD 2.9391
Multiples of: 1

 600 V1.66 V+/- 20 V60 A100 nA  TO - 247AD - 3TubeSiThrough Hole270 W- 55 C+ 175 CIxxh30n60
IXGH32N170


IGBT Transistors 72 Amps 1700 V 3.3 V Rds
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IXYS Availability : 59
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USD 17.212
Multiples of: 1

Single1700 V 20 V    TO - 247AD - 3TubeSiThrough Hole - 55 C+ 150 CIxgh32n170
IXBH42N170A


IGBT Transistors BIMOSET 42A 1700V
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IXYS Availability : 58
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USD 27.2278
Multiples of: 1

Single1700 V5.2 V20 V    TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 CIxbh42n170
IXYH8N250CHV


Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD
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IXYS Availability : 56
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USD 23.7002
Multiples of: 1

Single       TO - 247HV - 3Tube Through Hole280 W- 55 C+ 175 C 
IXGH28N120B


IGBT Transistors 28 Amps 1200V 3.50 Rds
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IXYS Availability : 53
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USD 3.3569
Multiples of: 1

Single1200 V 20 V    TO - 247 - 3TubeSiThrough Hole250 W- 55 C+ 150 C 
IXGH10N170A


IGBT Transistors 20 Amps 1700 V 7 V Rds
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IXYS Availability : 52
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USD 7.2429
Multiples of: 1

Single1700 V 20 V    TO - 247AD - 3TubeSiThrough Hole - 55 C+ 150 CIxgh10n170
IXBH2N250


IGBT Transistors Disc IGBT BiMSFT-VeryHiVolt TO-247AD
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IXYS Availability : 52
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USD 15.8686
Multiples of: 1

                
IXA30RG1200DHGLB


IGBT Transistors XPT IGBT Phaseleg
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IXYS Availability : 51
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USD 10.0461
Multiples of: 1

          Si    Ixa30rg1200dhglb
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