About IGBT Transistors

Ixys IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGH36N60B3


IGBT Transistors GenX3 600V IGBTs
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IXYS 289
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USD 4.485
Multiples of: 1

        TO - 247AD - 3TubeSi    Ixgh36n60
IXGH48N60A3D1


IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 48A
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IXYS 286
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USD 6.5509
Multiples of: 1

 600 V1.18 V20 V 100 nA  TO - 247AD - 3TubeSiThrough Hole300 W- 55 C+ 150 CIxgh48n60
IXYH20N120C3D1


IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
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IXYS 282
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USD 10.751
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Single1200 V4 V30 V36 A100 nA  TO - 247AD - 3TubeSiThrough Hole230 W- 55 C+ 150 CIxyh20n120
IXYH50N65C3H1


IGBT Transistors 650V/130A XPTI C3-Class TO-247
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IXYS 279
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USD 8.671
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Single650 V1.74 V30 V130 A100 nA  TO - 247AD - 3TubeSiThrough Hole600 W- 55 C+ 175 CIxyh50n65
IXGH2N250


IGBT Transistors IGBT NPT-VERY HI VOLTAGE
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IXYS 278
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USD 13.962
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        TO - 247AD - 3TubeSiThrough Hole   Very High Voltage
IXYA15N65C3D1


IGBT Transistors Disc IGBT XPT-GenX3 TO-263D2
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IXYS 271
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USD 2.236
Multiples of: 1

Single650 V1.96 V20 V38 A100 nA  TO - 263 - 3 SiSmd/Smt200 W- 55 C+ 175 C 
IXBH6N170


IGBT Transistors 12 Amps 1700V 3.6 Rds
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IXYS 268
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USD 6.9575
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Single1700 V2.3 V20 V    TO - 247AD - 3TubeSiThrough Hole - 55 C+ 150 CIxbh6n170
IXYK120N120C3


IGBT Transistors 1200V 220A XPT IGBT
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IXYS 261
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USD 25.558
Multiples of: 1

Single1200 V2.55 V30 V240 A100 nA  TO - 264 - 3TubeSiThrough Hole1.5 kW- 55 C+ 175 CPlanar
IXXH60N65B4


IGBT Transistors 650V/116A TRENCH IGBT GENX4 XPT
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IXYS 257
Ships to you
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USD 6.058
Multiples of: 1

Single650 V1.7 V20 V116 A100 nA  TO - 247AD - 3TubeSiThrough Hole455 W- 55 C+ 175 CIxxh60n65
IXDH20N120


IGBT Transistors 20 Amps 1200V
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IXYS 236
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USD 5.642
Multiples of: 1

Single1200 V2.4 V20 V    TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 CIxdh20n120
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