About IGBT Transistors

Ixys IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXXH75N60C3D1


750W 150A 600V TO-247AD IGBTs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 169
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USD 6.3074
Multiples of: 1

         TubeSi     
IXYA20N120C4HV


IGBT Transistors IGBT 4TH GENERATION GENX4
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IXYS 169
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USD 7.6327
Multiples of: 1

         Tube      
IXGH35N120B


IGBT Transistors 70 Amps 1200V 3.3 Rds
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IXYS 164
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USD 15.2566
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Single1200 V +/- 20 V    TO - 247 - 3Tube Through Hole - 55 C+ 150 CIxgh35n120
IXYX110N120B4


IGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT PLUS247
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IXYS 156
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USD 14.3076
Multiples of: 1

Single1200 V - 30 V , + 30 V340 A    TubeSiThrough Hole1360 W- 55 C+ 175 C1200V XPTTM Gen 4
IXA20I1200PZ-TUB


IGBT Transistors IGBT XPT-GENX3
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IXYS 143
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USD 3.013
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         Tube      
IXYP8N90C3D1


IGBT Transistors XPT 900V IGBT GenX3 XPT IGBTs
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IXYS 142
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USD 3.562
Multiples of: 1

Single900 V2.15 V30 V20 A100 nA  TO - 220 - 3TubeSiThrough Hole125 W- 55 C+ 175 CIxyp8n90
IXSP20N60B2D1


IGBT Transistors 20 Amps 600V 2.5 Rds
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IXYS 126
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USD 4.2394
Multiples of: 1

Single600 V2.5 V+/- 20 V +/- 100 nA190 W TO - 220 - 3Tube Through Hole - 55 C+ 150 CIxsp20n60
IXGH6N170A


IGBT Transistors 12 Amps 1700 V 7 V Rds
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IXYS 122
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USD 4.518
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Single1.7 kV5.4 V+/- 20 V6 A100 nA  TO - 247AD - 3TubeSiThrough Hole75 W- 55 C+ 150 CIxgh6n170
IXBH5N160G


IGBT Transistors 5 Amps 1600V
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IXYS 116
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USD 5.9286
Multiples of: 1

Single1.6 kV4.9 V20 V5.7 A100 nA  TO - 247 - 3TubeSiThrough Hole68 W- 55 C+ 150 CIxbh5n160
IXGH16N170


IGBT Transistors 32 Amps 1700 V 3.5 V Rds
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IXYS 103
Ships to you
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USD 9.9245
Multiples of: 1

Single1.7 kV2.7 V+/- 20 V32 A100 nA  TO - 247AD - 3TubeSiThrough Hole190 W- 55 C+ 150 CIxgh16n170
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