Microchip IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
APT50GN120L2DQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
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Microchip 152
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between Thu. 16 May to Mon. 20 May
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USD 16.767

Multiples of: 1

Single1.2 kV1.7 V30 V134 A600 nA  TO - 264 - 3TubeSiThrough Hole543 W- 55 C+ 150 C 
APT35GN120BG


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single
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Microchip 118
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between Thu. 16 May to Mon. 20 May
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USD 8.2225

Multiples of: 1

Single1.2 kV1.7 V30 V94 A600 nA379 W TO - 247 - 3TubeSiThrough Hole379 W- 55 C+ 150 C 
APT25GR120B


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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Microchip 106
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between Thu. 16 May to Mon. 20 May
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USD 5.604

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      521 W   NPT, POWER MOS 8®     
APT35GN120L2DQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip 99
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between Thu. 16 May to Mon. 20 May
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USD 10.488

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Single1.2 kV1.7 V30 V94 A600 nA  TO - 264 - 3TubeSiThrough Hole379 W- 55 C+ 150 C 
APT20GF120BRDG


IGBT Transistors FG, IGBT, 1200V, 20A, TO-247, RoHS
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Microchip 95
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between Thu. 16 May to Mon. 20 May
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USD 7.26

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          NPT     
APT15GN120BDQ1G


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
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Microchip 83
Ships to you
between Thu. 16 May to Mon. 20 May
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USD 8.1173

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      195 W   Field Stop     
APT33GF120BRG


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequency - Single
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Microchip 82
Ships to you
between Thu. 16 May to Mon. 20 May
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USD 8.947

Multiples of: 1

Single1.2 kV2.5 V30 V52 A100 nA  TO - 247 - 3TubeSiThrough Hole297 W- 55 C+ 150 C 
APT15GP90BDQ1G


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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Microchip 79
Ships to you
between Fri. 10 May to Thu. 16 May
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USD 7.072

Multiples of: 1

      250 W   POWER MOS 7®, PT     
APT54GA60B


IGBT Transistors FG, IGBT, 600V, TO-247
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Microchip 78
Ships to you
between Thu. 16 May to Mon. 20 May
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USD 7.5116

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      416 W   POWER MOS 8®, PT     
APT75GN60LDQ3G


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip 67
Ships to you
between Thu. 16 May to Mon. 20 May
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USD 10.1085

Multiples of: 1

Single600 V1.45 V30 V155 A600 nA536 W TO - 264 - 3TubeSiThrough Hole536 W- 55 C+ 175 C 
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