TYPICAL PERFORMANCE CURVES APT75GN60LDQ3(G) 600V APT75GN60LDQ3 APT75GN60LDQ3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT s have ultra low V and are ideal for low frequency applications that require absolute minimum CE(ON) TO-264 conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V temperature coefcient. A built-in gate resistor ensures CE(ON) extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplies gate drive design and minimizes losses. 600V Field Stop Trench Gate: Low V CE(on) C Easy Paralleling 6s Short Circuit Capability G Intergrated Gate Resistor: Low EMI, High Reliability E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specied. C Parameter Symbol APT75GN60LDQ3(G) UNIT V Collector-Emitter Voltage 600 CES Volts V Gate-Emitter Voltage 30 GE 8 I Continuous Collector Current T = 25C 155 C1 C I Continuous Collector Current T = 110C 93 Amps C2 C 1 I Pulsed Collector Current 225 CM Switching Safe Operating Area T = 175C 225A 600V SSOA J P Total Power Dissipation 536 Watts D T ,T Operating and Storage Junction Temperature Range -55 to 175 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V Collector-Emitter Breakdown Voltage (V = 0V, I = 4mA) 600 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 1mA, T = 25C) 5.0 5.8 6.5 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 75A, T = 25C) 1.05 1.45 1.85 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 75A, T = 125C) 1.87 GE C j 2 Collector Cut-off Current (V = 600V, V = 0V, T = 25C) 50 CE GE j I A CES 2 Collector Cut-off Current (V = 600V, V = 0V, T = 125C) TBD CE GE j I Gate-Emitter Leakage Current (V = 20V) nA 600 GES GE R Intergrated Gate Resistor 4 G(int) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - APT75GN60LDQ3(G) DYNAMIC CHARACTERISTICS Characteristic Test Conditions Symbol MIN TYP MAX UNIT C Input Capacitance 4500 Capacitance ies C Output Capacitance 370 pF V = 0V, V = 25V oes GE CE C f = 1 MHz Reverse Transfer Capacitance 150 res V Gate-to-Emitter Plateau Voltage Gate Charge 9.5 V GEP 3 V = 15V Q Total Gate Charge 485 GE g V = 300V Q Gate-Emitter Charge 30 nC CE ge I = 75A Q Gate-Collector Mille) Charge C 270 gc 7 T = 175C, R = 4.3 , V = J G GE Switching Safe Operating Area SSOA 225 A 15V, L = 100H,V = 600V CE V = 600V, V = 15V, CC GE Short Circuit Safe Operating Area s SCSOA 6 7 T = 125C, R = 4.3 J G t Inductive Switching (25C) Turn-on Delay Time 47 d(on) t V = 400V Current Rise Time 48 r CC ns t V = 15V Turn-off Delay Time 385 d(off) GE I = 75A t 38 Current Fall Time C f 7 R = 1.0 4 E G Turn-on Switching Energy 2500 on1 T = +25C 5 E J J Turn-on Switching Energy (Diode) 3725 on2 6 E Turn-off Switching Energy 2140 off t Inductive Switching (125C) Turn-on Delay Time 47 d(on) t V = 400V Current Rise Time 48 r CC ns t V = 15V Turn-off Delay Time d(off) 430 GE I = 75A t Current Fall Time C 55 f 7 R = 1.0 4 4 E G 2600 Turn-on Switching Energy on1 T = +125C 55 E J Turn-on Switching Energy (Diode) 4525 J on2 66 E 2585 Turn-off Switching Energy off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case (IGBT) .28 JC C/W R Junction to Case (DIODE) .34 JC W Package Weight gm 5.9 T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode. 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off 7 R is external gate resistance, not including R nor gate driver impedance. (MIC4452) G G(int) 8 Continuous current limited by package lead temperature to 100A. APT Reserves the right to change, without notice, the specications and information contained herein. 050-7620 Rev B 10-2005