About IGBT Transistors

Rohm IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
RGTV60TK65GVC11


IGBT Transistors 650V 30A TO-3PFM Field Stp Trnch IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 827
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USD 3.3063
Multiples of: 1

Single650 V1.5 V30 V33 A200 nA  TO - 3PFMTubeSiThrough Hole76 W- 40 C+ 175 C 
RGT8TM65DGC9


IGBT Transistors FIELD STOP TRENCH IGBT
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ROHM 785
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USD 1.0373
Multiples of: 1

Single650 V1.65 V30 V5 A200 nA  TO - 220 - 3TubeSiThrough Hole16 W- 40 C+ 175 C 
RGT50NS65DGTL


IGBTs Trench Field Stop 650V 25A LPDS RoHS
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ROHM 777
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USD 1.8509
Multiples of: 1

                
RGPR20NS43HRTL


IGBT Transistors 430V 20A 1.6V Vce Ignition IGBT
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ROHM 708
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USD 0.9027
Multiples of: 1

Single460 V1.6 V10 V20 A0.6 mA Aec - Q101TO - 263 - 3Cut Tape Smd/Smt107 W- 40 C+ 175 C 
RGTV60TS65GC11


IGBT Transistors 650V 30A TO-247N Field Stp Trnch IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 694
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USD 2.8639
Multiples of: 1

Single650 V1.5 V30 V60 A200 nA  TO - 247N - 3TubeSiThrough Hole194 W- 40 C+ 175 C 
RGCL60TS60GC11


IGBT Trench Field Stop 600 V 48 A 111 W Through Hole TO-247N
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ROHM 691
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USD 2.2188
Multiples of: 1

Single600 V1.4 V30 V48 A200 nA  TO - 247 - 3BulkSiThrough Hole111 W- 40 C+ 175 C 
RGW80TS65GC11


IGBT Transistors 650V 40A TO-247N Field Stp Trnch IGBT
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ROHM 577
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USD 2.898
Multiples of: 1

Single650 V1.5 V30 V78 A200 nA  TO - 247N - 3TubeSiThrough Hole214 W- 40 C+ 175 C 
RGW60TS65GC11


IGBT Transistors 650V 30A TO-247N Field Stp Trnch IGBT
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ROHM 525
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USD 2.6815
Multiples of: 1

Single650 V1.5 V30 V60 A200 nA  TO - 247N - 3TubeSiThrough Hole178 W- 40 C+ 175 C 
RGTVX6TS65GC11


IGBT Transistors 650V 80A TO-247N Field Stp Trnch IGBT
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ROHM 480
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USD 4.517
Multiples of: 1

Single650 V1.5 V30 V144 A200 nA  TO - 247N - 3TubeSiThrough Hole404 W- 40 C+ 175 C 
RGW60TK65GVC11


IGBT Transistors 650V 30A TO-3PFM Field Stp Trnch IGBT
Icon ROHS
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 436
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USD 3.1782
Multiples of: 1

Single650 V1.5 V30 V33 A200 nA  TO - 3PFMTubeSiThrough Hole72 W- 40 C+ 175 C 
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