About IGBT Transistors

Rohm IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
RGTH80TK65DGC11


IGBT Trench Field Stop 650 V 31 A 66 W Through Hole TO-3PFM
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ROHM 434
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USD 3.9
Multiples of: 1

Single650 V1.6 V30 V31 A200 nA  TO - 3PFMTubeSiThrough Hole66 W- 40 C+ 175 C 
RGS00TS65HRC11


IGBT Transistors 650V 50A FIELD STOP TRENCH IGB
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ROHM 434
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USD 4.4613
Multiples of: 1

Single650 V1.65 V30 V88 A200 nA Aec - Q101TO - 247N - 3TubeSiThrough Hole326 W- 40 C+ 175 C 
RGTH00TS65GC11


ROHM Semiconductor IGBT Transistors
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ROHM 433
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USD 2.64
Multiples of: 1

 650 V1.6 V+/- 30 V85 A+/- 200 nA  TO - 247 - 3TubeSiThrough Hole277 W- 40 C+ 175 CRgth00ts65
RGTH60TK65DGC11


IGBT Trench Field Stop 650 V 28 A 61 W Through Hole TO-3PFM
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ROHM 433
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USD 3.8009
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Single650 V1.6 V30 V28 A200 nA  TO - 3PFMTubeSiThrough Hole61 W- 40 C+ 175 C 
RGTH40TK65GC11


IGBT Trench Field Stop 650 V 23 A 56 W Through Hole TO-3PFM
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ROHM 426
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USD 2.812
Multiples of: 1

Single650 V1.6 V30 V23 A200 nA  TO - 3PFMTubeSiThrough Hole56 W- 40 C+ 175 C 
Hot RGCL60TK60GC11


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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ROHM 417
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USD 1.9716
Multiples of: 1

Single600 V1.4 V30 V30 A200 nA  TO - 3PFMTubeSiThrough Hole54 W- 40 C+ 175 C 
RGCL80TS60GC11


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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ROHM 415
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USD 2.5273
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Single600 V1.4 V30 V65 A200 nA  TO - 247N - 3BulkSiThrough Hole148 W- 40 C+ 175 C 
RGW60TS65DGC11


IGBT Transistors 650V 30A TO-247N Field Stp Trnch IGBT
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ROHM 414
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USD 3.1205
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Single650 V1.5 V30 V60 A200 nA  TO - 247N - 3TubeSiThrough Hole178 W- 40 C+ 175 C 
RGTH40TS65DGC11


ROHM Semiconductor IGBT Transistors
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 412
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USD 1.817
Multiples of: 1

 650 V1.6 V+/- 30 V40 A+/- 200 nA  TO - 247 - 3TubeSiThrough Hole144 W- 40 C+ 175 CRgth40ts65
RGS80TSX2DHRC11


IGBT Transistors 1200V 40A FIELD STOP TRENCH
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ROHM 391
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USD 3.5014
Multiples of: 1

Single1200 V1.7 V30 V 500 nA Aec - Q101TO - 247N - 3TubeSiThrough Hole555 W- 40 C+ 175 C 
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