About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
RGT8NL65DGTL


IGBT Trench Field Stop 650 V 8 A 65 W Surface Mount LPDS
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ROHM Availability : 956
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USD 0.9775

Multiples of: 1

Single650 V1.65 V30 V8 A200 nA  TO - 263L - 3Cut TapeSiSmd/Smt65 W- 40 C+ 175 C 
IKP20N65H5


Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop 5
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Infineon Availability : 950
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USD 1.3915

Multiples of: 1

Single650 V1.65 V20 V42 A100 nA  TO - 220 - 3TubeSiThrough Hole125 W- 40 C+ 175 CTrenchstop 5 H5
AIGB15N65F5ATMA1


IGBT Transistors DISCRETE SWITCHES
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 950
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USD 1.6018

Multiples of: 1

         Cut Tape      
IKB30N65ES5ATMA1


IGBT Transistors INDUSTRY 14
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Infineon Availability : 949
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USD 2.0883

Multiples of: 1

Single650 V1.35 V20 V62 A100 nA  TO - 263 - 3Cut Tape Smd/Smt188 W- 40 C+ 175 C 
AOT15B60D


Transistor: IGBT; 600V; 15A; 83.3W; TO220; Eon:0.42mJ; Eoff:0.11mJ
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Alpha & Omega Availability : 948
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USD 1.8375

Multiples of: 1

  1.6 V   83.3 W         
IKP40N65F5XKSA1


Transistor: IGBT; 650V; 74A; 255W; TO220-3; Series: F5
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Infineon Availability : 945
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USD 1.932

Multiples of: 1

      255 W   Trenchstop 5    F5
RGT8NS65DGC9


IGBT Trench Field Stop 650 V 8 A 65 W Through Hole TO-262
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM Availability : 944
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USD 1.092

Multiples of: 1

Single650 V1.65 V30 V8 A200 nA  TO - 262 - 3TubeSiThrough Hole65 W- 40 C+ 175 C 
IKW50N60T


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 50A
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Infineon Availability : 939
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USD 2.8508

Multiples of: 1

Single600 V1.5 V+/- 20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole333 W- 40 C+ 150 CIkw50n60
IKW75N65ES5XKSA1


IGBT Transistors TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.
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Infineon Availability : 937
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USD 4.6624

Multiples of: 1

Single650 V1.42 V20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole395 W- 40 C+ 175 CTrenchstop 5 S5
RGT16NS65DGC9


IGBT Trench Field Stop 650 V 16 A 94 W Through Hole TO-262
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM Availability : 930
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USD 1.3225

Multiples of: 1

Single650 V1.65 V30 V16 A200 nA  TO - 262 - 3TubeSiThrough Hole94 W- 40 C+ 175 C 
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