IGBT - Field Stop 600 V, 40 A FGH40N60SF Description Using novel field stop IGBT technology, ON Semiconductors field stop IGBTs offer the optimum performance for solar inverter, UPS, www.onsemi.com welder and PFC applications where low conduction and switching losses are essential. C Features High Current Capability Low Saturation Voltage: V = 2.3 V I = 40 A CE(sat) C G High Input Impedance Fast Switching: E = 8 J/A OFF E This Device is PbFree and is RoHS Compliant E Applications C GG Solar Inverter, UPS, Welder, PFC COLLECTOR (FLANGE) TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FGH40N60 SF Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH40N60SF = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: February, 2020 Rev. 2 FGH40N60SF/DFGH40N60SF ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Description Symbol Ratings Unit Collector to Emitter Voltage V 600 V CES Gate to Emitter Voltage V 20 V GES Transient GatetoEmitter Voltage 30 Collector Current T = 25C I 80 A C C Collector Current T = 100C 40 A C Pulsed Collector Current T = 25C I (Note 1) 120 A C CM Maximum Power Dissipation T = 25C P 290 W C D Maximum Power Dissipation T = 100C 116 W C Operating Junction Temperature T 55 to +150 C J Storage Temperature Range T 55 to +150 C stg Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds T 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Parameter Symbol Typ Max Unit Thermal Resistance, Junction to Case R (IGBT) 0.43 C/W JC Thermal Resistance, Junction to Ambient R 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Packing Method Reel Size Tape Width Quantity FGH40N60SFTU FGH40N60SF TO247 Tube N/A N/A 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) C Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BV V = 0 V, I = 250 A 600 V CES GE C Temperature Coefficient of Breakdown BV / T V = 0 V, I = 250 A 0.6 V/C CES J GE C Voltage Collector CutOff Current I V = V , V = 0 V 250 A CES CE CES GE GE Leakage Current I V = V , V = 0 V 400 nA GES GE GES CE ON CHARACTERISTICs GE Threshold Voltage V I = 250 A, V = V 4.0 5.0 6.5 V GE(th) C CE GE Collector to Emitter Saturation Voltage V I = 40 A, V = 15 V 2.3 2.9 V CE(sat) C GE I = 40 A, V = 15 V, T = 125C 2.5 V C GE C www.onsemi.com 2