About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGP10NC60S


Trans IGBT Chip N-CH 600V 21A 3-Pin(3+Tab) TO-220 Tube
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STMicroelectronics Availability : 867
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USD 1.3569
Multiples of: 1

Single        Rail/Tube      
RGT8NS65DGTL


IGBT Transistors 650V 4A Field Stop Trench IGBT
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ROHM Availability : 866
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USD 0.6164
Multiples of: 1

 650 V1.65 V+/- 30 V8 A+/- 200 nA  TO - 263 - 3ReelSiSmd/Smt65 W- 40 C+ 175 CRgt8ns65d
RGT30NS65DGC9


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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ROHM Availability : 861
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USD 1.5848
Multiples of: 1

Single650 V1.65 V30 V30 A200 nA  TO - 262 - 3TubeSiThrough Hole133 W- 40 C+ 175 C 
SGT60N60FD1PN


TO-3P-3 IGBTs ROHS
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Silan Availability : 860
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USD 1.9444
Multiples of: 1

                
RGT16NL65DGTL


IGBT Transistors FIELD STOP TRENCH IGBT
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ROHM Availability : 857
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USD 1.2535
Multiples of: 1

Single650 V1.65 V30 V16 A200 nA  TO - 263L - 3Cut TapeSiSmd/Smt94 W- 40 C+ 175 C 
IGW15N120H3


Transistor: IGBT; 1200V; 30A; 217W; TO247-3; Series: H3
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Infineon Availability : 857
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USD 2.185
Multiples of: 1

      217 W   Trenchstop 3    H3
IKZA50N65SS5XKSA1


IGBT Trench Field Stop 650V 80A 274W Through Hole PG-TO247-4-3
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Infineon Availability : 856
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USD 6.3825
Multiples of: 1

        TO - 247 - 4Tube     Trenchstop 5
RGTH00TS65GC13


IGBT Transistors IGBT
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ROHM Availability : 851
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USD 3.3645
Multiples of: 1

Single650 V2.1 V30 V85 A   TO - 247GE - 3TubeSiThrough Hole277 W- 40 C+ 175 C 
IMBG120R090M1HXTMA1


N-Channel 1.2kV 26A (Tc) 136W (Tc) Surface Mount PG-TO263-7-12
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Infineon Availability : 849
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USD 7.4038
Multiples of: 1

        TO - 263 - 8 , D²PAK (7 Leads + Tab) , TO - 263CATape And ReelSic (Silicon Carbide Junction Transistor)    Coolsic
HGTP5N120BND


IGBT Transistors 21a 1200V IGBT NPT Series N-Ch
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ON Semiconductor Availability : 848
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USD 5.2427
Multiples of: 1

Single1200 V2.45 V+/- 20 V21 A+/- 250 nA167 W TO - 220 - 3Tube Through Hole - 55 C+ 150 CHgtp5n120
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