About MOSFET

Diodes Incorporated MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Transistor Polarity
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Mounting Style
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Package / Case
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Packaging
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Number Of Channels
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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Channel Mode
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Qualification
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS84Q-13-F


Trans MOSFET P-CH 50V 0.13A Automotive 3-Pin SOT-23 T/R
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Diodes Incorporated 252200
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USD 0.0354
Multiples of: 10000

   P     Surface Mount Tape And Reel    Enhancement  
DMN63D8LV-7


MOSFET Dual N-Ch Enh Mode 30V 4.2Ohm 200mA
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Diodes Incorporated 171690
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USD 0.035
Multiples of: 3000

260 mA30 V2.8 OhmsN - Channel 800 mV- 55 C+ 150 C450 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel10 V0.87 nCEnhancement  
DMN62D0U-13


MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
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Diodes Incorporated 164900
Ships to you
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USD 0.0379
Multiples of: 10000

380 mA60 V1.2 OhmsN - Channel 500 mV- 55 C+ 150 C380 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel+/- 20 V500 pCEnhancement  
DMN62D0UDW-7


MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
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Diodes Incorporated 159583
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USD 0.0587
Multiples of: 1

350 mA , 350 mA60 v , 60 V1.2 Ohms , 1.2 OhmsN - Channel 500 mV , 500 mV- 55 C+ 150 C320 mWSmd/SmtSOT - 363 - 6ReelSi2 Channel+/- 20 v , +/- 20 V500 pC , 500 pCEnhancement  
DMN10H220LQ-7


MOSFET MOSFET BVDSS: 61V~100V SOT23 T&R 3K
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Diodes Incorporated 158225
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USD 0.0598
Multiples of: 1

           Cut TapeSi    Aec - Q101 
DMP2045UQ-7


MOSFET MOSFET BVDSS: 8V 24V SOT23 T&R 3K
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Diodes Incorporated 150324
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USD 0.0851
Multiples of: 1

           Cut Tape       
DMG7430LFG-7


MOSFET MOSFET BVDSS: 31V-40 PowerDI3333-8 T&R 2K
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Diodes Incorporated 142032
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USD 0.1012
Multiples of: 1

10.5 A30 V11 mOhmsN - Channel 2.5 V- 55 C+ 150 C2.2 WSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel10 V26.7 nCEnhancement  
DMP2018LFK-7


MOSFET MOSFET BVDSS: 8V-24V U-DFN2523-6 T&R 3K
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Diodes Incorporated 141576
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USD 0.1394
Multiples of: 1

9.2 A20 V16 mOhmsP - Channel 1.2 V- 55 C+ 150 C2.1 WSmd/SmtU - DFN2523 - 6Cut TapeSi1 Channel4.5 V53 nCEnhancement  
DMTH6010LK3Q-13


MOSFET 60V 175c N-Ch FET 8mOhm 10Vgs 70A
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Diodes Incorporated 140650
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USD 0.5742
Multiples of: 2500

70 A60 V12 mOhmsN - Channel 1 V- 55 C+ 175 C60 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 20 V41.3 nCEnhancementAec - Q101 
DMN6075S-7


MOSFET 60V N-Ch Enh FET 20Vgss 0.8W 600pF
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 2910
Ships to you
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USD 0.057
Multiples of: 3000

2.5 A60 V85 mOhmsN - Channel 1 V- 55 C+ 150 C1.15 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V12.3 nCEnhancement  
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