DMP2018LFK P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D V R (BR)DSS DS(on)max Low Input Capacitance T = 25C A Low Input/Output Leakage 16m V = -4.5V -12.8A ESD Protected Gate up to 2kV GS -20V Lead Free by Design, RoHS Compliant (Note 1) -10A 25m V = -2.0V Gree Device (Note 2) GS Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the on- Case: U-DFN2523-6 state resistance (R ) and yet maintain superior switching DS(on) Case Material: Molded Plastic,Gree Molding Compound. performance, making it ideal for high efficiency power management UL Flammability Classification Rating 94V-0 applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper leadframe. Solderable DC-DC Converters per MIL-STD-202, Method 208 Power management functions Weight: 0.008 grams (approximate) Notebook PC Applications Portable Equipment Applications Drain U-DFN2523-6 Pin 1 Gate Pin 1, 2 = Source Pin 3 = Gate Gate Pin 4, 5, 6 = Drain Protection Source Diode Equivalent Circuit ESD PROTECTED TO 2kV Bottom View Ordering Information (Note 3) Part Number Case Packaging DMP2018LFK-7 U-DFN2523-6 3,000 / Tape & Reel DMP2018LFK-13 U-DFN2523-6 10,000 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Diodes Inc. sGree policy can be found on our website at DMP2018LFK Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 12 V GSS Steady T = 25C -9.2 A A I D State -7.3 T = 70C A Continuous Drain Current (Note 5) V = -4.5V GS T = 25C -12.8 A t<5s I A D -10.3 T = 70C A T = 25C Steady A -7.1 A I D State -6 T = 70C A Continuous Drain Current (Note 5) V = -2.0V GS T = 25C -10 A t<5s I A D -8.3 T = 70C A Maximum Continuous Body Diode Forward Current (Note 5) I -3 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I -90 A DM Avalanche Current (Note 6) 17 A I AS Repetitive Avalanche Energy (Note 6) 72 mJ E AS Thermal Characteristics Characteristic Symbol Value Units T = 25C 1 A Total Power Dissipation (Note 4) W P D T = 70C 0.63 A Steady State 126 Thermal Resistance, Junction to Ambient (Note 4) C/W R JA t<5s 60 T = 25C 2.1 A Total Power Dissipation (Note 5) W P D T = 70C 1.3 A Steady State 61 Thermal Resistance, Junction to Ambient (Note 5) R JA t<5s 29 C/W Thermal Resistance, Junction to Case 6.4 R JC Operating and Storage Temperature Range T T -55 to 150 C J, STG Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 2 of 7 March 2012 DMP2018LFK Diodes Incorporated www.diodes.com Document number: DS35357 Rev. 5 - 2 ADVANCE INFORMATION NEW PRODUCT