DMN6075S 60V N-CHANNEL ENHANCEMENT MODE MOSFET Summary Features and Benefits I Max N MOSFET D BV R Max DSS DS(ON) T = +25C Low On-Resistance A Low Input Capacitance 85m V = 10V 2.5A GS 60V Fast Switching Speed 120m V = 4.5V 2.0A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, DS(ON) Mechanical Data making it ideal for high efficiency power management applications. Case: SOT23 Case Material: Molded P las t ic, Green Molding Com pound Applications UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Connections: See Diagram Below Power Management Functions Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Backlighting e3 Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) D SOT23 D G G S S Top View Top View Top View Pin Configuration Ordering Information (Note 4) Product Reel Size (inches) Tape Width (mm) Quantity per Reel DMN6075S-7 7 8 3,000 DMN6075S-13 13 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN6075S Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 2.0 A A Continuous Drain Current (Note 5) V = 10V I GS D State 1.5 T = +70C A Steady T = +25C 2.5 A Continuous Drain Current (Note 6) V = 10V I A GS D State T = +70C 2.0 A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 12 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit T = +25C 0.8 A Total Power Dissipation (Note 5) W P D T = +70C 0.5 A Steady State Thermal Resistance, Junction to Ambient (Note 5) 157 C/W R JA T = +25C 1.15 A Total Power Dissipation (Note 6) W P D T = +70C 0.7 A Steady State Thermal Resistance, Junction to Ambient (Note 6) 110 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D 1.0 A Zero Gate Voltage Drain Current TJ = +25C IDSS VDS = 60V, VGS = 0V Gate-Source Leakage 100 nA I V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1 3 V V V = V , I = 250A GS(TH) DS GS D 69 85 V = 10V, I = 3.2A GS D Static Drain-Source On-Resistance R m DS(ON) 75 120 V = 4.5V, I = 2.8A GS D Diode Forward Voltage V 1.2 V V = 0V, I = 2.5A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 606 pF iss V = 20V, V = 0V, DS GS Output Capacitance C 32.6 pF oss f = 1.0MHz Reverse Transfer Capacitance C 24.6 pF rss Gate Resistance R 1.5 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 10V) Q 12.3 nC GS g 5.6 nC Total Gate Charge (V = 4.5V) Q GS g V = 30V, I = 3A DS D Gate-Source Charge 1.7 nC Q gs Gate-Drain Charge 1.9 nC Q gd Turn-On Delay Time 3.5 ns t D(ON) Turn-On Rise Time t 4.1 ns R V = 10V, V = 30V, GS DS R = 20, R = 50 Turn-Off Delay Time t 35 ns g L D(OFF) Turn-Off Fall Time t 11 ns F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMN6075S March 2017 Diodes Incorporated www.diodes.com Document number: DS37023 Rev. 5 - 2 ADVANCE INFORMATION