About MOSFET

Diodes Incorporated MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Package / Case
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  Packaging
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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  Qualification
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  Tradename
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN65D8LFB-7


Diodes Incorporated MOSFET 60V N-Ch Dual Enh 20Vgss 300mW Pd
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Diodes Incorporated Availability : 97992
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USD 0.0345

Multiples of: 1

400 mA60 V3 OhmsN - Channel 1.2 V- 55 C+ 150 C430 mWSmd/SmtX1 - DFN1006 - 3Cut TapeSi1 Channel20 V-Enhancement  
DMN62D1LFDQ-7


MOSFET 2N7002 Family
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Diodes Incorporated Availability : 97797
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USD 0.1362

Multiples of: 1

           Cut Tape       
DMN2990UDJ-7


MOSFET MOSFET BVDSS: 8V-24V SOT963,10K
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Diodes Incorporated Availability : 97000
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USD 0.1011

Multiples of: 10000

450 mA20 V990 mOhmsN - Channel  - 55 C+ 150 C350 mWSmd/SmtSOT - 963 - 6Cut TapeSi2 Channel8 V500 pCEnhancement  
DMN32D4SDW-7


MOSFET 30V N-Ch Enh Mode 20Vgs 50pF 0.6nC
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Diodes Incorporated Availability : 96697
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USD 0.0586

Multiples of: 1

   N - Channel     Smd/SmtSOT - 363 - 6Cut TapeSi2 Channel     
DMTH6016LFDFWQ-7R


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated Availability : 95502
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USD 0.35

Multiples of: 1

9.4 A60 V18 mOhmsN - Channel 1 V- 55 C+ 175 C2.3 WSmd/SmtU - DFN2020 - 6Cut TapeSi1 Channel20 V15.3 nCEnhancementAec - Q101 
ZXMP6A17E6TA


P-Channel 60 V 2.3A (Ta) 1.1W (Ta) Surface Mount SOT-26
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Diodes Incorporated Availability : 93120
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USD 0.1641

Multiples of: 3000

3 A60 V125 mOhmsP - Channel 1 V- 55 C+ 150 C1.92 WSmd/SmtSOT - 26 - 6Cut TapeSi1 Channel10 V17.7 nCEnhancement  
DMP2012SN-7


Diodes Incorporated MOSFET 20V 700mA
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Diodes Incorporated Availability : 90210
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USD 0.1092

Multiples of: 3000

- 700 mA- 20 V300 mOhmsP - Channel12 V - 65 C+ 150 C500 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel12 V Enhancement  
DMP4047SSD-13


Diodes Incorporated MOSFET Dual P-Ch -40V ENH Min RDSon -20VGss
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated Availability : 89725
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USD 0.2986

Multiples of: 2500

- 6.5 A , - 6.5 A- 40 v , - 40 V45 mOhms , 45 mOhmsP - Channel - 1 v , - 1 V- 55 C+ 150 C1.8 WSmd/SmtSO - 8ReelSi2 Channel20 v , 20 V10.6 nC , 16 nCEnhancement  
DMN1008UFDF-7


MOSFET MOSFET BVDSS: 8V-24V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated Availability : 88547
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USD 0.1184

Multiples of: 1

12.2 A12 V6.6 mOhmsN - Channel 300 mV- 55 C+ 150 C1.7 WSmd/SmtU - DFN2020 - 6 Si1 Channel4.5 V13.6 nCEnhancement  
ZXMS6005DN8Q-13


MOSFET Low Side IntelliFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated Availability : 87570
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USD 0.5669

Multiples of: 1

1.2 A60 V350 mOhms , 350 mOhmsN - Channel 700 mV- 40 C+ 125 C1.56 WSmd/SmtSO - 8Cut TapeSi2 Channel5 V-EnhancementAec - Q101 
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