X3-Class V = 650V IXFA34N65X3 DSS TM HiPerFET I = 34A D25 Power MOSFET R 100m DS(on) D N-Channel Enhancement Mode G Avalanche Rated TO-263 S (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 650 V DSS J G = Gate D = Drain V T = 25 C to 150 C, R = 1M 650 V DGR J GS S = Source Tab = Drain V Continuous 20 V GSS V Transient 30 V GSM I T = 25 C 34 A D25 C I T = 25 C, Pulse Width Limited by T 48 A DM C JM Features I T = 25 C 5 A A C E T = 25 C 750 mJ International Standard Package AS C Low R and Q DS(ON) G dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J Avalanche Rated Low Package Inductance P T = 25 C 446 W D C T -55 ... +150 C J T 150 C Advantages JM T -55 ... +150 C stg High Power Density T Plastic Body for 10s 260 C SOLD Easy to Mount Space Savings F Mounting Force 10..65 / 2.2..14.6 N/lb C Weight 2.5 g Applications Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. AC and DC Motor Drives J Robotics and Servo Controls BV V = 0V, I = 1mA 650 V DSS GS D V V = V , I = 2.5mA 3.2 5.2 V GS(th) DS GS D I V = 20V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 25 A DSS DS DSS GS T = 125 C 3 mA J R V = 10V, I = 0.5 I , Note 1 100 m DS(on) GS D D25 DS101012B(9/21) 2021 Littelfuse, Inc. IXFA34N65X3 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 13 22 S fs DS D D25 R Gate Input Resistance 1.7 Gi C 2025 pF iss C V = 0V, V = 25V, f = 1MHz 2800 pF oss GS DS C 2.6 pF rss Effective Output Capacitance C 100 pF o(er) Energy related V = 0V GS C 440 pF V = 0.8 V o(tr) Time related DS DSS t 24 ns d(on) Resistive Switching Times t 10 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 47 ns d(off) R = 10 (External) G t 6 ns f Q 29 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 11 nC gs GS DS DSS D D25 Q 10 nC gd R 0.28 C/W thJC Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 34 A S GS I Repetitive, Pulse Width Limited by T 136 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 150 ns rr I = 17A, -di/dt = 100A/s F Q 1.05 C RM V = 100V R I 14.0 A RM Note: 1. Pulse test, t 300 s, duty cycle, d 2%. Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537