TM HiPerFET IXFH 13 N50 V = 500 V DSS Power MOSFETs IXFM 13 N50 I = 13 A D (cont) R = 0.4 DS(on) N-Channel Enhancement Mode t 250 ns rr TM High dv/dt, Low t , HDMOS Family rr Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) V T = 25 C to 150 C 500 V DSS J V T = 25 C to 150 C R = 1 M 500 V DGR J GS (TAB) V Continuous 20 V GS V Transient 30 V GSM I T = 25 C13A D25 C TO-204 AA (IXFM) I T = 25 C, pulse width limited by T 52 A DM C JM I T = 25 C13A AR C E T = 25 C18mJ AR C dv/dt I I , di/dt 100 A/ s, V V , 5 V/ns S DM DD DSS T 150 C, R = 2 G J G D P T = 25 C 180 W D C G = Gate, D = Drain, T -55 ... +150 C S = Source, TAB = Drain J T 150 C JM T -55 ... +150 C stg Features T 1.6 mm (0.062 in.) from case for 10 s 300 C International standard packages L TM Low R HDMOS process DS (on) M Mounting torque 1.13/10 Nm/lb.in. d Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) Weight TO-204 = 18 g, TO-247 = 6 g rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values DC-DC converters (T = 25 C, unless otherwise specified) J Uninterruptible Power Supplies (UPS) min. typ. max. Battery chargers Switched-mode and resonant-mode V V = 0 V, I = 250 A 500 V DSS GS D power supplies V V = V , I = 2.5 mA 2 4 V GS(th) DS GS D DC choppers Temperature and lighting controls I V = 20 V , V = 0 100 nA GSS GS DC DS Low voltage relays I V = 0.8 V T = 25 C 200 A DSS DS DSS J Advantages V = 0 V T = 125 C1mA GS J Easy to mount with 1 screw (TO-247) R V = 10 V, I = 0.5 I 0.4 (isolated mounting screw hole) DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % Space savings High power density IXYS reserves the right to change limits, test conditions, and dimensions. 91524D (10/95) 2000 IXYS All rights reserved 1 - 4IXFH 13N50 IXFH 13N50 Symbol Test Conditions Characteristic Values TO-247 AD (IXFH) Outline (T = 25 C, unless otherwise specified) J min. typ. max. g V = 10 V I = 0.5 I , pulse test 7.5 9.0 S fs DS D D25 C 2800 pF iss C V = 0 V, V = 25 V, f = 1 MHz 300 pF oss GS DS C 70 pF rss t 18 30 ns d(on) t V = 10 V, V = 0.5 V,2740ns r GS DS DSS t I = 0.5 I , R = 4.7 (External) 76 100 ns d(off) D D25 G t 32 60 ns f Q 110 120 nC Dim. Millimeter Inches g(on) Min. Max. Min. Max. Q V = 10 V, V = 0.5 V , I = 0.5 I 15 25 nC gs GS DS DSS D D25 A 19.81 20.32 0.780 0.800 Q 40 50 nC B 20.80 21.46 0.819 0.845 gd C 15.75 16.26 0.610 0.640 R 0.7 K/W D 3.55 3.65 0.140 0.144 thJC E 4.32 5.49 0.170 0.216 R 0.25 K/W thCK F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 Source-Drain Diode Characteristic Values K 10.8 11.0 0.426 0.433 (T = 25 C, unless otherwise specified) J L 4.7 5.3 0.185 0.209 Symbol Test Conditions min. typ. max. M 0.4 0.8 0.016 0.031 N 1.5 2.49 0.087 0.102 I V = 0 V 13 A S GS I Repetitive pulse width limited by T 52 A SM JM TO-204 AA (IXFM) Outline V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t T =25 C 250 ns rr J T = 125 C 350 ns J I = I F S Q T =25 C 0.6 C RM -di/dt = 100 A/ s, J T = 125 C 1.25 C V = 100 V J R I T =25 C9 A RM J T = 125 C15 A J Dim. Millimeter Inches Min. Max. Min. Max. A 38.61 39.12 1.520 1.540 B 19.43 19.94 - 0.785 C 6.40 9.14 0.252 0.360 D 0.97 1.09 0.038 0.043 E 1.53 2.92 0.060 0.115 F 30.15 BSC 1.187 BSC G 10.67 11.17 0.420 0.440 H 5.21 5.71 0.205 0.225 J 16.64 17.14 0.655 0.675 K 11.18 12.19 0.440 0.480 Q 3.84 4.19 0.151 0.165 R 25.16 25.90 0.991 1.020 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 2000 IXYS All rights reserved 2 - 4 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025