Type BSS127 SIPMOS Small-Signal-Transistor Product Summary Features V 600 V DS n-channel R 500 W DS(on),max enhancement mode I 0.021 A D Logic level (4.5V rated) dv /dt rated PG-SOT-23 100%lead-free RoHS compliant Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Type Package Pb-free Halogen-free Tape and Reel Information Marking BSS127 PG-SOT-23 Yes Yes H6327: 3000PCS/reel SIs Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C Continuous drain current 0.021 A D A T =70C 0.017 A Pulsed drain current I T =25C 0.09 D,pulse A I =0.021A, D V =480V, DS Reverse diode dv /dt dv /dt 6 kV/s di /dt =200A/s, T =150C j,max V Gate source voltage 20 V GS ESD class (JESD22-A114-HBM) 0 (<250) Power dissipation P T =25C 0.50 W tot A Operating and storage temperature T , T -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Rev. 2.1 page 1 2016-02-10BSS127 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 250 K/W thJA junction - minimal footprint Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =250A Drain-source breakdown voltage 600 - - V (BR)DSS GS D V V =V , I =8A Gate threshold voltage 1.4 2.0 2.6 GS(th) DS GS D V =600V, V =0V, DS GS I Drain-source leakage current - - 0.1 A D (off) T =25C j V =600V, V =0V, DS GS - - 10 T =150C j I V =20V, V =0V Gate-source leakage current - 10 100 nA GSS GS DS V =4.5V, GS R Drain-source on-state resistance - 330 600 W DS(on) I =0.016A D V =10V, I =0.016A - 310 500 GS D V >2 I R , DS D DS(on)max Transconductance g 0.007 0.015 - S fs I =0.01A D Rev. 2.1 page 2 2016-02-10