BSS159NH6327XTSA2 Infineon

BSS159NH6327XTSA2 electronic component of Infineon
BSS159NH6327XTSA2 Infineon
BSS159NH6327XTSA2 MOSFETs
BSS159NH6327XTSA2  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BSS159NH6327XTSA2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS159NH6327XTSA2 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BSS159NH6327XTSA2
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Datasheet: BSS159NH6327XTSA2 Datasheet (PDF)
Price (USD)
3000: USD 0.1244 ea
Line Total: USD 373.2 
Availability : 93120
  
Ship by Tue. 19 Aug to Mon. 25 Aug
QtyUnit Price
3000$ 0.1244
6000$ 0.0865

Availability 133860
Ship by Tue. 19 Aug to Mon. 25 Aug
MOQ : 444
Multiples : 1
QtyUnit Price
444$ 0.5865
747$ 0.3484
1304$ 0.1994
1346$ 0.1932
1530$ 0.17
3000$ 0.1401


Availability 93120
Ship by Tue. 19 Aug to Mon. 25 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1244
6000$ 0.0865


Availability 61110
Ship by Tue. 19 Aug to Mon. 25 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1017
6000$ 0.1
9000$ 0.0951
12000$ 0.0944
15000$ 0.0922


Availability 23124
Ship by Tue. 19 Aug to Mon. 25 Aug
MOQ : 1352
Multiples : 1
QtyUnit Price
1352$ 0.1924
1389$ 0.1872
6000$ 0.1787


Availability 10286
Ship by Fri. 15 Aug to Tue. 19 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.5175
10$ 0.31
100$ 0.1752
500$ 0.1551
1000$ 0.1408
3000$ 0.1111
6000$ 0.1034
9000$ 0.1001
24000$ 0.0946


Availability 1233
Ship by Fri. 15 Aug to Tue. 19 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.644
10$ 0.4452
25$ 0.3458
50$ 0.28
99$ 0.1946


Availability 419040
Ship by Tue. 19 Aug to Mon. 25 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1361
6000$ 0.0941
9000$ 0.0935


Availability 93120
Ship by Tue. 19 Aug to Mon. 25 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1244
6000$ 0.0865


Availability 133860
Ship by Tue. 19 Aug to Mon. 25 Aug
MOQ : 747
Multiples : 1
QtyUnit Price
747$ 0.3484
1304$ 0.1994
1346$ 0.1932
1530$ 0.17
3000$ 0.1401

   
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Power Dissipation
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSS159NH6327XTSA2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS159NH6327XTSA2 and other electronic components in the MOSFETs category and beyond.

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BSS159N SIPMOS Small-Signal-Transistor Product Summary Features V 60 V DS N-channel R 8 DS(on),max Depletion mode I 0.13 A DSS,min dv /dt rated Available with V indicator on reel GS(th) Qualified according to AEC Q101 PG-SOT-23 100% lead-free Halogen-free RoHS compliant 3 1 2 Type Package Pb-free Halogen-free Tape and Reel Information Marking BSS159N PG-SOT-23 Yes Yes H6327: 3000 pcs/reel SGs BSS159NBSS159N PPGG-S-SOTOT-2-233 YeYess YeYess H6906: 3000 pcH6906: 3000 pcss//rreel seel soorrtted in ed in SGSGss 1)1) VV bandsbands GSGS(th(th)) Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25 C 0.23 A D A T =70 C 0.18 A I T =25 C Pulsed drain current 0.92 D,pulse A I =0.23 A, V =60 V, D DS Reverse diode dv /dt dv /dt di /dt =200 A/s, 6 kV/s T =150 C j,max V Gate source voltage 20 V GS ESD Class JESD22-A114 -HBM 0(<250V) P T =25 C Power dissipation 0.36 W tot A Operating and storage temperature T , T -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) see table on next page and diagram 11 Rev. 2.2 page 1 2009-07-29BSS159N Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics R minimal footprint - - 350 K/W Thermal characteristics thJA Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =-10 V, I =250 A Drain-source breakdown voltage 60 - - V (BR)DSS GS D V V =3 V, I =26 A Gate threshold voltage -3.5 -2.8 -2.4 GS(th) DS D V =60 V, DS I Drain-source cutoff current - - 0.1 A D(off) V =-10 V, T =25 C GS j V =60 V, DS -- 10 V =-10 V, T =125 C GS j II VV =20 V, 20 V VV =0 V0V GtGate-source leakage currentl k t - - 1010 nAA GSS GS DS I V =0 V, V =10 V On-state drain current 130 - - mA DSS GS DS Drain-source on-state resistance R V =0 V, I =0.07 A - 3.9 8 DS(on) GS D V =10 V, I =0.16 A - 1.7 3.5 GS D V >2 I R , DS D DS(on)max Transconductance g 0.1 0.19 - S fs I =0.16 A D 2) Threshold voltage V sorted in bands GS(th) V V =3 V, I =26 A J -2.6 - -2.4 V GS(th) DS D K -2.75--2.55 L -2.9--2.7 M -3.05--2.85 N -3.2--3 2) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 2.2Rev. 2.2 page 2page 2 2009-07-292009-07-29

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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